The paper describes a modeling approach, which enables systematic printing and compensation repair studies for multilayer defects on EUV-masks. The procedure combines an approximative model for the pre-optimization of required repair shapes with an accurate and efficient, fully rigorous modeling of the final repair shape. The obtained simulations results demonstrate the capabilities of compensation repair to reduce the impact of defects and confirm the eligibility of this technique as a valuable and important ingredient of a defect mitigation strategy for EUV masks.
The EUV-photomask is used as mirror and no longer as transmissive device. In order to yield defect-free reticles, repair capability is required for defects in the absorber and for defects in the mirror. Defects can propagate between the EUV mask layers, which makes the detection and the repair complex or impossible if conventional methods are used. In this paper we give an overview of the different defect types. We discuss the EUV repair requirements including SEM-invisible multilayer defects and blank defects, and demonstrate e-beam repair performance. The repairs are qualified by SEM, AFM and wafer prints. Furthermore a new repair strategy involving in-situ AFM is introduced. This new strategy is applied on natural defects and the repair quality is verified using state of the art EUV wafer printing technology.
Defects below and inside multilayers of EUV masks belong to the most critical concerns for the application of
EUV lithography in manufacturing processes. These defects are difficult to inspect and to repair. Moreover,
they may print at different focus positions. The paper employs fully rigorous electromagnetic field simulations
to investigate the printing characteristics of such defects under various process conditions. Selected simulation
results are compared to experimental data. Additional simulations demonstrate possible defect repair strategies.
The EUV-photomask is used as mirror and no longer as transmissive device. In order to yield defect-free reticles, repair
capability is required for defects in the absorber and for defects in the mirror. Defects can propagate between the EUV
mask layers, which makes the detection and the repair complex or impossible if conventional methods are used. In this
paper we give an overview of the different defect types. We discuss the EUV repair requirements including SEMinvisible
multilayer defects, and demonstrate e-beam repair performance. The repairs are qualified by SEM, AFM and
through-focus wafer prints. Furthermore a new repair strategy involving in-situ AFM is introduced. Successful repair is
demonstrated on real defects.
First experimental evidence is given that a second generation blank inspection tool has missed a number of printing
reticle defects caused by an imperfection of its EUV mirror, i.e., so-called multi-layer defects (ML-defects). This work
continued to use a combination of blank inspection (BI), patterned mask inspection (PMI) and wafer inspection (WI) to
find as many as possible printing defects on EUV reticles. The application of more advanced wafer inspection, combined
with a separate repeater analysis for each of the multiple focus conditions used for exposure on the ASML Alpha Demo
Tool (ADT) at IMEC, has allowed to increase the detection capability for printing ML-defects. It exploits the previous
finding that ML-defects may have a through-focus printing behavior. They cause a different grade of CD impact on the
pattern in their neighborhood, depending on the focus condition. Subsequent reticle review is done on the corresponding
locations with both SEM (Secondary Electron Microscope) and AFM (Atomic Force Microscope). This review
methodology has allowed achieving clear evidence of printing ML defects missed by this BI tool, despite of a too high
nuisance rate, reported before. This establishes a next step in the investigation how essential actinic blank inspection
(ABI) is. Presently it is the only known technique whose detection capability is considered independent from the
presence of a (residual) distortion of the multi-layer at the top surface. This is considered an important asset for blank
inspection, because the printability of a ML-defect in EUV lithography is determined by the distortion throughout the
multilayer, not that at the top surface.
Defects of the multi-layer (ML) mirror on a EUV reticle, so-called ML-defects, are a prime aspect why EUV mask
defectivity is considered a challenge before EUV lithography can be used for the production of future node integrated
circuits. The present paper addresses the possibility to mitigate the printability of these defects by repair. Repair of
natural EUV mask defects is performed using the electron beam based Carl Zeiss MeRiT® repair technology and is
evaluated by wafer printing on the ASML EUV Alpha Demo Tool (ADT) installed at IMEC. Both absorber defects and
ML-defects are included. The success of absorber defect repair (both opaque and clear type) is illustrated. For
compensation repair of ML-defects experimental proof of the technique is reported, with very encouraging results both
for natural pits and bumps. In addition, simulation is used to investigate the limitations of such compensation repair,
inspired by the residual printability found experimentally. As an example it was identified that alignment of the
compensation repair shape with the ML-defect position requires sub-20nm accuracy. The integration of an Atomic Force
Microscope (AFM) into the repair tool has been an important asset to cope with this.
Extreme ultraviolet (EUV) - lithography at a wavelength around 13.5 nm is considered as the most promising
successor of optical projection lithography. This paper reviews simulation models for EUV lithography. Resist
model parameters are calibrated with experimental data. The models are applied for the investigation of the
impact of mask multilayer defects on the lithographic process.
In this follow-up paper for our contribution at BACUS 2010, first evidence is shown that also the more advanced
Lasertec M7360 has missed a few printing reticle defects caused by an imperfection of its EUV mirror, a so-called multilayer
defect (ML-defect). This work continued to use a combination of blank inspection (BI), patterned mask inspection
(PMI) and wafer inspection (WI) to find as many as possible printing defects on EUV reticles. The application of more
advanced wafer inspection, combined with a separate repeater analysis for each of the multiple focus conditions used for
exposure on the ASML Alpha Demo Tool (ADT) at IMEC, has allowed to increase the detectability of printing MLdefects.
The latter uses the previous finding that ML-defects may have a through-focus printing behavior, i.e., they cause
a different grade of CD impact on the pattern in their neighborhood, depending on the focus condition. Subsequent
reticle review is used on the corresponding locations with both SEM (Secondary Electron Microscope) and AFM
(Atomic Force Microscope). This review methodology has allowed achieving clear evidence of printing ML defects
missed by this BI tool, despite of an unacceptable nuisance rate reported before. This is a next step in the investigation if
it is possible to avoid actinic blank inspection (ABI) at all, the only presently known technique that is expected to be
independent from the presence of a (residual) topography of the ML-defect at the top of the EUV mirror, in detecting
those defects. This is considered an important asset of blank inspection, because the printability of a ML-defect on the
EUV scanner and its detectability by ABI is determined by the distortion throughout the multilayer, not that at the
surface.
A combination of blank inspection (BI), patterned mask inspection (PMI) and wafer inspection (WI) is used to find as
many as possible printing defects on two different EUV reticles. These multiple inspections result in a total population of
known printing defects on each reticle. The printability of these defects is first confirmed by wafer review on wafers
exposed on the full field ASML Alpha Demo Tool (ADT) at IMEC. Subsequently reticle review is performed on the
corresponding locations with both SEM (Secondary Electron Microscope) and AFM (Atomic Force Microscope). This
review methodology allows to separate absorber related mask defects and multi layer (ML) related mask defects. In this
investigation the focus is on ML defects, because this type of reticle defects is EUV specific, and not as evolutionary as
absorber defects which can be mitigated in more conventional ways.
This work gives evidence of critical printing ML defects of natural origin, both pits as shallow as 3nm and bumps just
3nm high at the surface. Wafer inspection was the first inspection technique to detect these ML-defects with marginal
surface height distortion, because both state-of-the-art PMI and especially standard BI on the Lasertec M1350 had failed
to detect these defects.
Compared to standard BI, the more advanced Lasertec M7360 is found to have much better sensitivity for printing MLdefects
and our work so far shows no evidence of printing ML defects missed by this tool. Unfortunately it was also
observed that this required sensitivity was only achieved at the cost of an unacceptable nuisance rate, i.e., with a too high
number of detections of non-printing defects. Optical blank inspection is facing major challenges : It needs not only to
find ML defects with height distortions of 3nm and less (and in theory maybe even 0nm), but also it must be able to
disposition between such likely-printing and non-printing defects.
EUVL requires the use of reflective optics including a reflective mask. The reticle blank contains a
reflecting multilayer, tuned for 13.5nm, and an absorber which defines the dark areas. The EUV mask is a
complex optical element with many more parameters than the CD uniformity of the patterned features that
impact the final wafer CDU. Peak reflectivity, centroid wavelength and absorber stack height variations
need to be tightly controlled for optimum performance. Furthermore the oblique incidence of light in
combination with the small wavelength compared to the mask topography causes a number of effects which
are unique to EUV, such as an H-V CD offset and an orientation dependent pattern placement error. These
so-called shadowing effects can be corrected by means of OPC, but also need to be considered in the mask
stack design.
In this paper we will show that it is possible to improve the imaging performance significantly by reducing
the sensitivity to mask making variations such as capping layer thickness and absorber stack height
variations. The impact of absorber stack height variations on CD and proximity effects will be determined
experimentally by changing the local absorber stack height using the novel e-beam based reticle repair tool
MeRiT® HR 32 from Carl Zeiss in combination with exposures on ASML's alpha demo tool. The impact of
absorber reflectivity will be shown experimentally and used to derive requirements for the reticle border
around the image field, as well as possible correction techniques.
With the continuing decrease of feature sizes on photomasks and the related rising costs for current and future masks
the importance of a reliable repair and repair assessment process has often been highlighted. The assessment, repair and
repair validation of these expensive masks has become a very substantial factor of the total mask production cost
The introduction of immersion lithography and the proposed introduction of double exposure strategies will further
amplify this trend. In this paper we have concentrated on masks with feature sizes relevant for the 45nm node and
defects with typical size and shape as they appear in production. Phase shifting masks with synthetic defects have been
manufactured and the printability of the defects is analyzed with an AIMSTM45-193i. For representative defects the
outline and three-dimensional shape as well as further characteristics have been visualized with the inherent electron
microscope capability of the electron beam based repair tool, prior to repairing them with the repair system. In addition
we will show the behaviour of the phase of the mask in a region of interest, that is in this case the repair area and its
immediate vicinity. This will be done by a special new tool, named Phame(R), developed for measuring the actual phase
of smallest mask features with a high spatial resolution.
The decreasing feature sizes as induced by the ITRS have a growing impact on the cost of current and future
photolithographic masks. The assessment, repair and repair validation of these expensive masks has become a very
substantial factor of the total mask production cost. The introduction of immersion lithography and the proposed
introduction of double exposure strategies will further amplify this trend. In order to make the whole procedure more
manageable in a production environment, with its constraints on timing and resource allocation, a seamless workflow of
the repair and validation procedure is sought. A proposed way to achieve this is the set up of a dedicated tool set with a
backbone infrastructure designed for this workflow as well as for the specific high resolution task. In this paper we
concentrate on masks with feature sizes relevant for the 45nm node and defects with typical size and shape as they
appear in production. Phase shifting masks with synthetic defects have been manufactured and the printability of the
defects is analyzed with an AIMSTM45-193i. In part the defect outline and three-dimensional shape as well as further
characteristics have been visualized with an electron microscope, prior to repairing them with an electron beam based
repair system. In addition we will show the behaviour of the phase of the mask in a region of interest, that is in this case
the repair area and its immediate vicinity. This will be done by a special new tool, named Phame®, developed for
measuring the actual phase of smallest mask features with a high spatial resolution.
In the conclusion we will give an outlook how the proposed workflow and the how the employed technologies will
influence the masks that are expected to emerge for the 32nm node.
Nano-optical devices are raising more and more interest for a variety of applications. From single molecule detection at high molecular concentration by Fluorescence Correlation Spectroscopy (FCS) through optical multiplexing with photonic crystal structures into the exciting field of negative index of refraction materials, the hardware functional dimensions and surely the tolerances are reaching the lower tens of nanometer range. The fabrication of such devices,
i.e. the machining of optically interesting materials and material combinations (dielectric, semiconducting, or metallic) at this scale needs adaptation of classical nanostructuring technologies like Electron Beam Lithography (EBL), or the application of serial direct machining technologies like Focused Charged Particle Beam Etching or Deposition with electrons or Ga ions. For low excitation volume FCS measurements, EBL is used for production of high quality nanoscale
sub-wavelength apertures in optically opaque (150 nm thick) metal films. The process consists in high aspect ratio patterning of a thick negative e-beam resist film followed by metal lift off. The optically transparent substrate allows the production of any 2D aperture geometry. Difficulties of the production process and their limits are presented. Direct serial machining with charged particle beams shows excellent flexibility and is an interesting 3D alternative method. Deposition by decomposing volatile chemicals under an ion/electron probe, which can be as small as 7nm/1nm, this
technique allows for rapid, local prototyping of 2D and 3D nano-structures with highest lateral and axial resolution. The deposited material can be tuned to homogeneous, nanocomposite or crystalline, metallic or transparent, opening the way to applications in photonic crystals and plasmonics. An original in-situ micro-reflectometry method permits the real time control of the growth of the deposits.
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