Dr. Tzer-Perng Chen
Senior Vice President at Epistar Corp
SPIE Involvement:
Author
Publications (10)

Proceedings Article | 23 February 2009 Paper
Tzer-Perng Chen, Ta-Cheng Hsu, Chuan-yu Luo, Ming-Chi Hsu, Tsung-Xian Lee
Proceedings Volume 7216, 72161T (2009) https://doi.org/10.1117/12.808458
KEYWORDS: Light emitting diodes, Monte Carlo methods, Sapphire, Internal quantum efficiency, Zinc oxide, Patterned sapphire substrate, Photons, Reflection, Quantum efficiency, Nanorods

Proceedings Article | 15 February 2008 Paper
Proceedings Volume 6894, 689411 (2008) https://doi.org/10.1117/12.768595
KEYWORDS: Gallium nitride, Light emitting diodes, Sapphire, Semiconducting wafers, Chemical mechanical planarization, Resistance, Metals, Wafer bonding, Manufacturing, Polishing

Proceedings Article | 13 February 2008 Paper
T. P. Chen, C. L. Yao, C. Y. Wu, J. H. Yeh, C. W. Wang, M. H. Hsieh
Proceedings Volume 6910, 691005 (2008) https://doi.org/10.1117/12.768607
KEYWORDS: Light emitting diodes, Metals, Sapphire, Resistance, Aluminium gallium indium phosphide, Absorption, Internal quantum efficiency, Wet etching, Luminous efficiency, Silicon

Proceedings Article | 7 March 2005 Paper
Wayne Jan, Tien-fu Liao, Tzer Peng Chen, Chih Sung Chang
Proceedings Volume 5739, (2005) https://doi.org/10.1117/12.589947
KEYWORDS: Light emitting diodes, Aluminium gallium indium phosphide, Metals, Luminous efficiency, Reflectors, Lamps, Etching, Reflectivity, Gallium arsenide, Silicon

Proceedings Article | 7 March 2005 Paper
Proceedings Volume 5739, (2005) https://doi.org/10.1117/12.589943
KEYWORDS: Quantum wells, Vertical cavity surface emitting lasers, Phase only filters, Light emitting diodes, Polymer optical fibers, Modulation, Light sources, Fiber optic communications, Optical communications, Eye

Showing 5 of 10 publications
Conference Committee Involvement (3)
Gallium Nitride Materials and Devices V
25 January 2010 | San Francisco, California, United States
Gallium Nitride Materials and Devices IV
26 January 2009 | San Jose, California, United States
Gallium Nitride Materials and Devices III
21 January 2008 | San Jose, California, United States
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