State Optical Institute (SOI) named after S.I. Vavilov was the major Federal research institute in the USSR responsible for research and development of optical materials, optical components and optical systems for wide range of applications. Creation of first high power pulsed lasers in ruby and Nd doped glasses in middle sixties resulted in damage of optical components used in those lasers. Therefore complex researches were triggered at SOI in several directions. The main attention was paid the role of different defects on damage of different materials. The leading research group in both theory and experiment was headed by Dr. Alexey Bonch-Bruevich while development of technology of materials with high resistance to laser radiation was managed by Dr. Gury Petrovskii. This presentation will provide a survey of results in theory and experimental study of mechanisms of laser induced damage.
Damage of a metal spherical nanoparticle by femtosecond laser pulses is analyzed by splitting the overall process into two steps. The fast step includes electron photoemission from a nanoparticle. It takes place during direct action of a laser pulse and its rate is evaluated as a function of laser and particle parameters by two approaches. Obtained results suggest the formation of significant positive charge of the nanoparticles due to the photoemission. The next step includes ion emission that removes the excessive positive charge and modifies particle structure. It is delayed with respect to the photo-emission and is analyzed by a simple analytical model and modified molecular dynamics. Obtained energy distribution suggests generation of fast ions capable of penetrating into surrounding material and generating defects next to the nanoparticle. The modeling is extended to the case of a nanoparticle on a solid surface to understand the basic mechanism of surface laser damage initiated by nano-contamination. Simulations predict embedding the emitted ions into substrate within a spot with size significantly exceeding the original particle size. We discuss the relation of those effects to the problem of bulk and surface laser-induced damage of optical materials by single and multiple ultrashort laser pulses.
The objective of this combined experimental and theoretical research is to study the dynamics and mechanisms of nanoparticle
interaction with ultrashort laser pulses and related modifications of substrate surface. For the experimental effort,
metal (gold), dielectric (SiO2) and dielectric with metal coating (about 30 nm thick) spherical nanoparticles deposited on
glass substrate are utilized. Size of the particles varies from 20 to 200 nm. Density of the particles varies from low (mean
inter-particle distance 100 nm) to high (mean inter-particle distance less than 1 nm). The nanoparticle assemblies and the
corresponding empty substrate surfaces are irradiated with single 130-fs laser pulses at wavelength 775 nm and different
levels of laser fluence. Large diameter of laser spot (0.5-2 mm) provides gradient variations of laser intensity over the
spot and allows observing different laser-nanoparticle interactions. The interactions vary from total removal of the nanoparticles
in the center of laser spot to gentle modification of their size and shape and totally non-destructive interaction.
The removed particles frequently form specific sub-micrometer-size pits on the substrate surface at their locations. The
experimental effort is supported by simulations of the nanoparticle interactions with high-intensity ultrashort laser pulse.
The simulation employs specific modification of the molecular dynamics approach applied to model the processes of
non-thermal particle ablation following laser-induced electron emission. This technique delivers various characteristics
of the ablation plume from a single nanoparticle including energy and speed distribution of emitted ions, variations of
particle size and overall dynamics of its ablation. The considered geometry includes single isolated particle as well a
single particle on a flat substrate that corresponds to the experimental conditions. The simulations confirm existence of
the different regimes of laser-nanoparticle interactions depending on laser intensity and wavelength. In particular,
implantation of ions departing from the nanoparticles towards the substrate is predicted.
We report the results of theoretical study of damage, induced by Coulomb forces, in (a) solid nanoparticles, and (b) the
surface of solid dielectric, ionized by ultrashort laser pulses (USLP). The basic assumption of proposed model is that the
damage occurs due to the laser-induced disturbance of charge equilibrium in solid with the further electron emission
from irradiated area. When electrons outflow from crystal, the non-compensated positive charge creates a strong
electrostatic field, causing the movement of the charged sites and micro- and/or macro- destruction of the condensed
matter.
The results of both analytical and numerical study of the optical damage of a solid nano-size particle, partly ionized by
an ultra-short laser pulse (USLP) are presented. The comparison of the results that has been obtained analytically and
numerically shows that the proposed method allows to describe the main features of nano-particle damage induced by
Coulomb forces, that arise in solid due to the charge equilibrium distortion under USLP action.
The kinetics of energy spectra of the spreading ions has been analyzed taking into account the Coulomb repulsive forces
and the retarding processes that restrict ion motion inside the particle.
The results of theoretical investigation of processes resulting from disturbance of charge equilibrium in a solid nanoparticle,
induced by fast ionization under high-intensity ultra-short laser pulse action are presented. Analytical and
numerical methods were used to study time evolution of space and energy distributions of moving ions during their
spreading away from the particle for various sizes and shapes of the particle as well as various degrees of ionization of
its material. The final aim of the presented study is to analyze the influence of the disturbance of charge equilibrium
induced by high-intensity ultra-short laser pulses in a solid on parameters of laser-induced damage of the material, and
the regularities of the atoms and ions motion of the media in damage area under the action of local laser-induced
Coulomb potential.
Our paper is devoted to theoretical analysis of mechanisms of laser-induced dmaage of transparent solids by femtosecond laser pulses in single-shot regime. The duration of the pulses is so small that the phonon sub-system practically does not take part in the processes occurring during the direct action of laser pulse. It means that the process of direct damage starts with a certain delay after the laser pulse. We have come to conclusion that it is reasonable to separate out three main stages of the process of macroscopic damage: 1) the direct laser-solid interaction during pulse action including mulitphoton absorption, excitation of the electron subsystem near the material surface and fast leaving of the irradiated area by electrons (e.g., through photoelectron emission); 2) fast after-action including breaking of electrical neutrality in thin near-surface layer and acceleration of ions; 3) slow or delayed after-action including moving of fast ions into bulk accompanied by heating up of the material through collisions resulting in macroscopic thermal damage. In this presentation we focus on the first two stages, i.e., excitation of the electron sub-system, electron emission and development of electrostatic instability often referred to as Coulomb explosion. Estimations performed on the basis of the Keldysh formula show possibility to reach extremely high density of electrons in conduction band (up to 50% of total number of valence electrons) at laser intensity slightly above 10 TW per sq. cm. The electrons can leave the irradiated area before the laser pulse ends. We utilize Keldysh formula to estimate the total number of electrons lost through emission and show the number to be high enough for significant breaking of electrical neutrality and fomration of relatively large positive charge localized in the irradiated area. Assuming the multiphoton ionization to give the dominant contribution to absorption, we estimate the total number of electrons lost through emission and show the number to be high enough for significant breaking of electrical neutrality and formation of relatively large positive charge localized in the irradiated area. Assuming the mulitphoton ionization to give the dominant contribution to absorption, we estimate the characteristic thickness of the ionized layer and show the positive charge to be localized in the layer which is approximately 1 micrometer thick. Then we estimate velocities and energies of ions accelerated by the laser-induced charge and show possibility of appearing ions with MeV energies. The penetration depth characteristic of those ions is an order of 10 micrometers what implies possibility of heating and thermal damage of the material with formation of deep craters.
There is proposed and described a physical model for possible sequence of effects induced by femtosecond high-intensity laser pulses in semiconductor and dielectric crystals. Basic points of the model are considered on the basis of the simplest estimations allowing to judge if the points do not contradict general physical regulations. Main advantage of the proposed model is capability of explaining extremely deep heating induced by super-short laser pulses and drilling of high-aspect holes.
The theoretical study of the some processes taking place under the intense light excitation of the small area of the semiconductor surface by the short laser pulse had been carried out. The results of the performed analysis show that the absorption due to the “impurity depletion” must be taken into account in the processes of the ultra-short pulse action on the extremely small areas of semitransparent materials.
The thermo-induced processes leading to the abrupt growth of the light transparency in the high-scattering media due to its homogenization under the intense laser beam action has been studied and discussed. It has been studied experimentally the light beam penetration into the solid dispersed stearin during its softening and melting under the laser-light action. The description and explanation of the experimental results has been done in the framework of the model based on the assumption, that the light scattering is defined by some phenomenological parameter namely the “order parameter” which is linked with the grain boundaries concentration in the non-homogeneous medium.
We discuss different manifestations of the laser-induced homogenization (LIH) in the light-diffusing media - an abrupt decrease of the light diffusion in condensed media under the intensive light action. The key mechanisms of the LIH are discussed including the avalanche-like ones. We present the results of the simplest model, describing the LIH arising upon melting of a solid, when the abrupt drop of the light scattering occurs due to homogenization of optical properties of the medium.
It is shown that the photocurrent amplification in Schottky diodes (SD) with low barriers is due to the avalanche of minority carriers in the depletion layer (DL) of a semiconductor. The simple physical model of carrier generation in the DL of the diode is proposed for the experimental results interpretation. The theoretical estimates of the current amplification coefficient are in a good agreement with experimental data.
There are reviewed and summarized several theoretical models describing various mechanisms of developing of laser-induced temperature and field instabilities in both absorbing and nonabsorbing microinclusions. Most attention is paid to application of the models to investigation of laser-induced damage. General criterion for evaluation of damage threshold is deduced from presented models and discussed.
There are reviewed and summarized several theoretical models describing various mechanisms of developing of laser-induced temperature and field instabilities in both absorbing and nonabsorbing microinclusions. The key points are different mechanisms of positive feedbacks between laser-field and matter parameters connected with laser-induced variations of both refraction and absorption. Most attention is paid to application of the models to investigation of laser-induced damage of transparent materials, in particular, evaluation of damage-threshold fluence. General criterion for evaluation of damage threshold is deduced from the presented models are discussed.
A model description of the laser-induced free carriers influence upon the point defect generation and optical damage in the wide-gap semiconductors and dielectrics is presented. The model is based on the following assertions: (1) The defect creation probability in solid considerably increases compared with its usual temperature-fluctuation value if the free carriers are involved in defect generation process (so-called recombination-stimulated defect reactions); (2) The point defect creation in crystal resulting in energy spectrum transformation leads to free carriers generation in solid even without the lattice heating. The positive feedback between free carrier and point defect concentrations stimulates the fast increase both carrier and defect densities and under certain conditions results in optical damage of crystal. The conducted analysis makes it possible to assert that: (1) The optical damage of transparent solids is often due to the electron-stimulated defect reactions arising under the wide range of light irradiation parameters; (2) The above mentioned process of the defect generation must be taken into account in the analysis of 'accumulative effects' in low absorbing media under multiple laser action with sub- threshold intensities.
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