We have designed a silicon detector based on an avalanche photodiode for detecting vacuum ultraviolet radiation. It was demonstrated that the detector has a photon detection efficiency superior to 0.65 electrons / photon, in the wavelength range from 114 to 170 nm, with an external quantum yield from 49 to 7000 electrons / photon at a reverse-bias voltage from 190 to 315 V, respectively. The detector’s active area diameter is 1.5 mm.
Vladimir Zabrodsky, Pavel Aruev, Vladimir Filimonov, Nikolay Sobolev, Evgeniy Sherstnev, Viktor Belik, Anton Nikolenko, Denis Ivlyushkin, Valery Pindyurin, Nikita Shadrin, Artem Soldatov, Mikhail Mashkovtsev
This work presents the results of long-term observation of the silicon photodiodes spatial profile response and the silicon photodiodes dark current after their exposure to 10.2 eV quanta and in the spectral range of 150–300 eV. Exposure of the photodiodes to quanta of an energy of 10.2 eV was repeated. Several other photodiodes have been irradiated in the spectral range of 700-1800 eV with a dose of 8 J/cm2. The spatial profile of the irradiated photodiodes was studied with 3.49 eV, 10.2 eV and 100 eV quanta. The effect of the recovery of the response spatial profile has been proved for the p+-n diode. An additional useful method of visualization of irradiated photodiode area is also presented.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.