Mr. Vladislav V. Andryushkin Profile

Vladislav V. Andryushkin

at ITMO Univ

SPIE Involvement:

Author

Publications (3)

Proceedings Article | 13 March 2024 Presentation + Paper

High-speed MBE-grown 1550 nm wafer-fused VCSELs

Georgiy Sapunov, Si-Cong Tian, Sergey Blokhin, Iakov Kovach, Denis Papylev, Stanislav Rochas, Vladislav Andryushkin, Evgenii Kolodeznyi, Andrey Babichev, Andrey Gladyshev, Innokenty Novikov, Alexey Blokhin, Mikhail Bobrov, Nikolay Maleev, Kirill Voropaev, Victor Ustinov, Mansoor Ahamed, Konstantin Shugurov, Anton Egorov, Leonid Karachinsky, Dieter Bimberg

Proceedings Volume 12904, 129040K (2024) https://doi.org/10.1117/12.3000473

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Semiconducting wafers, Indium gallium arsenide, Temperature metrology, Quantum wells, Heterojunctions, Design, Relative intensity noise

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SPIE Journal Paper | 20 September 2022

20-Gbps 1300-nm range wafer-fused vertical-cavity surface-emitting lasers with InGaAs/InAlGaAs superlattice-based active region

Sergei Blokhin, Andrey Babichev, Andrey Gladyshev, Innokenty Novikov, Alexey A. Blokhin, Mikhail A. Bobrov, Nikolay Maleev, Vladislav Andryushkin, Dmitrii Denisov, Kirill Voropaev, Victor Ustinov, Vladislav E. Bougrov, Anton Egorov, Leonid Karachinsky

OE, Vol. 61, Issue 09, 096109, (September 2022) https://doi.org/10.1117/12.10.1117/1.OE.61.9.096109

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Gallium, Quantum wells, Single mode fibers, Temperature metrology, Aluminum, Wafer-level optics, Optical engineering, Eye

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Proceedings Article | 3 March 2022 Presentation + Paper

1300-nm wafer-fused VCSELs with InGaAs/InAlGaAs superlattice-based active region

Sergey Blokhin, Nikolay Ledentsov, Stanislav Rochas, Andrey Babichev, Andrey Gladyshev, Łukasz Chorchos, Oleg Yu. Makarov, Leonid Ya. Karachinsky, Innokenty Novikov, Alexey Blokhin, Mikhail Bobrov, Nikolay Maleev, Vladislav Andryushkin, Kirill Voropaev, Irina Zhumaeva, Victor Ustinov, Anton Yu. Egorov

Proceedings Volume 12020, 120200K (2022) https://doi.org/10.1117/12.2605451

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Quantum wells, Internal quantum efficiency, Absorption, Mirrors, Epitaxy, Transparency, Single mode fibers, Semiconducting wafers

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