KEYWORDS: Semiconductor lasers, Waveguides, High power lasers, Near field optics, Continuous wave operation, Cladding, Reliability, Aluminum, Photonics, Doping
High power, high brightness, single emitter laser diodes with different apertures from 5 μm to 1000 μm are
reported on, in the wavelength range from 780 nm to 1060 nm. On going progress at Axcel Photonics for both single-mode
and multi-mode laser diodes will be presented. These diode lasers show high slope efficiency, low threshold
current and low voltage, etc. Laser diodes with different emitting apertures at 5μm, 50 μm, 90 μm, 200 μm, 400 μm,
1000 μm, are reported on and discussed in detail. The reliability data for different sized emitters is presented. These
results demonstrated that Axcel's technologies enable laser diodes made from Al based material grown on GaAs
substrates, which can reliably operate at high brightness and high power in the near infrared-wavelength range under
wide range of emitting apertures. These laser diodes are suitable for a wide variety of applications including medical,
material processing, graphics, pumping solid-state lasers and fiber lasers.
KEYWORDS: Lab on a chip, Semiconductor lasers, Near field, Near field optics, Reliability, Fiber lasers, Laser damage threshold, High power lasers, Waveguides, Quantum wells
High brightness, high power, and highly reliable 915nm InAlGaAs laser diodes with optimized design are reported in
this paper. The laser diodes exhibit excellent performance, such as, high slope efficiency, low threshold current, low
voltage, etc., which make them suitable for high brightness operation. The aging test data shows no failures during aging
test and more than 220,000 hours estimated lifetime for 90um emitter laser diodes at 8W CW operation. The aging test
with the same emitter size at higher stress conditions showed sudden failure that corresponds to catastrophic optical
damage (COD) on the facet. A novel large optical cavity (LOC) epi-structure with flat-top near field intensity
distribution was developed. The maximum output power is up to 23W under CW testing condition at 25 °C, which is
highest level achieved so far. The output power is limited by thermal roll over and there is no COD occurring. This data
shows Axcel's technologies can further increase the brightness to over 110mW per micron for 915nm laser diodes. This
type of laser diodes is essential for pumping fiber lasers to replace CO2 lasers for industry applications.
High power laser diodes and diode arrays emitting at the wavelength of 808nm are widely used for pumping
neodymium (Nd+) doped solid state lasers and fiber lasers, medical surgery, dental treatment and material processing. In
general, the power is limited by catastrophic optical mirror damage (COMD) and heat dissipation. In this paper we
demonstrate 29W CW output power at 808 nm from a 400 &mgr;m single emitter with 2mm cavity length. The device
thermally rolls over due to the excess heat. The L-I curve rolls over at 29.5W, the laser is still alive, and we can repeat
the test again and again without catastrophic optical mirror-damage (COMD). The device consists of an
InAlGaAs/AlGaAs/GaAs, optimized special graded-index separated-confinement heterostructure (GRINSCH) broad
waveguide (BW), single quantum well (SQW) and barriers between waveguide and cladding layers. A weak temperature
dependence characteristic, which is desirable for high power and reliable operation, is obtained from these devices.
High power, 1060 nm, InGaAs/GaAs/AlGaAs graded-index, separate-confinement (GRINSCH), strained single quantum-well (SQW), single mode (SM) laser diodes grown by Metal-Organic Chemical-Vapor Deposition (MOCVD) are reported. The high quality quantum well with high strain, which is the key issue to make high performance 1060 nm laser diode, was obtained by optimizing growth conditions. For realizing SM lasers and modules, the ridge-waveguide lasers with 5 um width and 1500 μm cavity length are successfully fabricated and mounted epitaxial-side up onto AlN submounts using eutectic Au80Sn20 solder to allow easy access to the emission region for fiber coupling and to minimize the effects of die bonding stress on the ridge. These devices exhibit threshold current of less than 30 mA, slope efficiency of up to 1.0 W/A and high kink-free power of 500 mW at 25°C. The devices that were subjected to long-term aging test at 85°C, operating at 300 mW, first show very good reliability. The coupled module with more than 70% fiber coupling efficiency and more than 200 mW output power from a single mode fiber or polarization maintained (PM) fiber in 14-pin butterfly case is demonstrated.
Reliable, high-power, single-mode, GaAlAs/GaAs, laser-diodes in the spectral region of 780 - 900 nm have been designed with procedures developed for telecom-grade, 980 nm, InGaAs/GaAlAs/GaAs pump diodes. Fifteen 808 nm, single-mode laser-diodes, mounted epitaxial-side up onto AlN submounts with eutectic Au80Sn20 solder, have been operated reliably for 3500 hours at 150 mW.
KEYWORDS: Semiconductor lasers, Cladding, Near field optics, Waveguides, Laser damage threshold, Structural design, Absorption, Reliability, Free space optics, Near field
We present a single-mode, 808 nm, AlInGaAs/AlGaAs/GaAs, strained, quantum-well laser with a record low, vertical divergence-angle of 12 degrees and high slope-efficiency of 1.0 W/A. Epitaxial-up mounted
devices have operated with no measurable degradation at 150 mW, 50°C for 3500 hours.
KEYWORDS: Quantum wells, Waveguides, Near field optics, Doping, Cladding, High power lasers, Metalorganic chemical vapor deposition, Semiconductor lasers, Absorption, Carbon
We report results on single-mode, InAlGaAs/AlGaAs/GaAs, 915 nm, lser-diodes operating reliably at 300 mW. The graded-index, separate-confinement, strained, single quantum-well structure was grown by metal-organic chemical-vapor deposition. Carbon, rather than zinc, was used as the p-doping srouce to reduce internal loss and potential reliability issues due to the thermal diffusion of zinc. A threshold current density of 133 A/cm2, internal loss of 2.0 cm-1 and internal quatnum efficiency of 93% were achieved. FOr 1500 μm long ridge waveguide lasers, a record single-mode output-power of 500mW was obtained for devices mounted epitaxial-side up onto AlN submounts using eutectic Au80Sn20 solder. Ten burned-in devices have now been aged at a constant current of 450 mA at 85°C for more than 1500 hours wihtout measurable degradation.
The long-term reliability of high-power, single-mode, 980 nm, InGaAs/GaAlAs/GaAs, laser diodes is reported. We have performed constant-current aging at at 85°C for three operating currents, 450 mA (~300 mW), 550 mA (~350 mW) and 700 mA (~420 mW). The data for 450 mA aging indicate a total failure rate of less than 250 FITs at a confidence level of 60%. For 550 mA and 700 mA operating currents, no degradation in laser performance within the 5% measurement accuracy of our test equipment have been observed during the first thousand hours of testing.
KEYWORDS: Waveguides, Semiconductor lasers, Near field optics, High power lasers, Absorption, Single mode fibers, Diodes, Aluminum, Thermal effects, Cladding
A ridge-waveguide, InGaAs/GaAlAs/GaAs, 980 nm, pump laser-diode emitting more than 600 mW of kink-free power and a FWHM divergence angle less than 22 degrees using an asymmetric-waveguide structure is presented. No catastrophic optical-damage was observed on p-up mounted devices up to a quasi-CW output power of 2 Watts where the power was limited by thermal effects.
Metal-semiconductor-metal (MSM) photodiodes with electrodes fabricated from the transparent conductor cadmium tin oxide (CTO) have been shown to double photoresponsivity. Their bandwidths, however, are significantly lower than those of MSMs fabricated with standard Ti/Au contacts. Though MSMs are generally believed to be limited by the transit time of electrons, it is possible the larger resistivity of CTO has become a significant factor, making the MSMs RC time constant limited instead. Previous models of MSMs only account for one of the two back-to-back Schottky diodes. A new model which takes into account both the forward and reverse biased junctions has been developed from the small signal model of a Schottky diode. This new model was fit to data obtained from S-parameter measurements, and incorporates both the transit time response and RC time constant response.
We will present high quality In0.53Ga0.47As which has been grown on semi- insulating (100) InP:Fe substrates by rare earth doped (Yb, Gd, and Er) liquid phase epitaxy using a graphite boat. The new earth ions, which are highly reactive, are thought to better impurities like O, C, and Si by reacting with these impurities and precipitating out in the melt, but not incorporating into the epitaxial layer to any significant amount.
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