Dr. Wilhelm Maurer Profile

Dr. Wilhelm Maurer

Director Technology Layout to Mask at Infineon Technologies AG

SPIE Involvement:

Editor | Author

Publications (36)

Proceedings Article | 20 October 2006 Paper

Litho-friendly design (LfD) methodologies applied to library cells

Kai Peter, Reinhard März, Sonja Gröndahl, Wilhelm Maurer

Proceedings Volume 6349, 63490E (2006) https://doi.org/10.1117/12.687546

KEYWORDS: Photovoltaics, Process modeling, Lithography, Optical proximity correction, Design for manufacturing, Databases, Resolution enhancement technologies, Silicon, Solar cells, Model-based design

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Proceedings Article | 21 June 2006 Paper

ORC and LfD as first steps towards DfM

Reinhard März, Kai Peter, Wilhelm Maurer

Proceedings Volume 6281, 62810I (2006) https://doi.org/10.1117/12.692641

KEYWORDS: Lithography, Photomasks, Process modeling, SRAF, Optical proximity correction, Design for manufacturing, Polishing, Design for manufacturability, Cadmium sulfide, Mask making

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SPIE Journal Paper | 1 July 2005

Polarization effects in immersion lithography

Konstantinos Adam, Wilhelm Maurer

JM3, Vol. 4, Issue 03, 031106, (July 2005) https://doi.org/10.1117/12.10.1117/1.2038687

KEYWORDS: Polarization, Immersion lithography, Optical proximity correction, Diffraction, Photomasks, Water, Lithographic illumination, Model-based design, Nanoimprint lithography, Lithography

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Proceedings Article | 12 May 2005 Paper

Full chip model based correction of flare-induced linewidth variation

James Word, Jerome Belledent, Yorick Trouiller, Yuri Granik, Olivier Toublan, Wilhelm Maurer

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601182

KEYWORDS: Optical proximity correction, Point spread functions, Convolution, Data modeling, Light scattering, Critical dimension metrology, SRAF, Databases, Optical lithography, Process modeling

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Proceedings Article | 12 May 2005 Paper

Physically based compact models for fast lithography simulation

Neal Lafferty, Kostas Adam, Yuri Granik, Andres Torres, Wilhelm Maurer

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599889

KEYWORDS: Process modeling, Lithography, Data modeling, Calibration, Resolution enhancement technologies, Error analysis, Semiconducting wafers, Photoresist processing, Optical proximity correction, Wafer-level optics

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Proceedings Article | 12 May 2005 Paper

Complementary dipole exposure solutions at 0.29 k1

Eric Hendrickx, Andres Torres, Neal Lafferty, Laurent Le Cam, Stephen Johnson, Carlo Reita, Geert Vandenberghe, Wilhelm Maurer

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.600843

KEYWORDS: Photomasks, Optical proximity correction, Reticles, Data modeling, Logic, Scanners, Optical lithography, Calibration, Semiconducting wafers, Oscillators

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Proceedings Article | 6 December 2004 Paper

MEEF-based mask inspection

Wilhelm Maurer, James Word, Steffen Schulze, Shumay Shang

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569330

KEYWORDS: Photomasks, Inspection, Optical proximity correction, Semiconducting wafers, SRAF, Printing, Lithography, Resolution enhancement technologies, Data modeling, Manufacturing

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Proceedings Article | 6 December 2004 Paper

Full-chip model-based correction of flare-induced linewidth variation

James Word, Jerome Belledent, Yorick Trouiller, Wilhelm Maurer, Yuri Granik, Emile Sahouria, Olivier Toublan

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569175

KEYWORDS: Optical proximity correction, Point spread functions, Convolution, Data modeling, Light scattering, Critical dimension metrology, SRAF, Databases, Optical lithography, Process modeling

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Proceedings Article | 28 May 2004 Paper

Calibration of OPC models for multiple focus conditions

Jochen Schacht, Klaus Herold, Rainer Zimmermann, J. Andres Torres, Wilhelm Maurer, Yuri Granik, Ching-Hsu Chang, G. Kuei-Chun Hung, Benjamin Szu-Min Lin

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.534123

KEYWORDS: Calibration, Data modeling, Process modeling, Optical proximity correction, Photoresist processing, Image processing, Metrology, Thin films, Image acquisition, Error analysis

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Proceedings Article | 28 May 2004 Paper

Polarization effects in immersion lithography

Konstantinos Adam, Wilhelm Maurer

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.534322

KEYWORDS: Polarization, Optical proximity correction, Immersion lithography, Water, Diffraction, Photomasks, Model-based design, Nanoimprint lithography, Scanners, Lithography

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Proceedings Article | 17 December 2003 Paper

Flows for model-based layout correction of mask proximity effects

Nicolas Cobb, Wilhelm Maurer

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518477

KEYWORDS: Photomasks, Data modeling, Mask making, Optical proximity correction, Calibration, Convolution, Semiconducting wafers, Model-based design, Mathematical modeling, System on a chip

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Proceedings Article | 26 June 2003 Paper

Failure prediction across process window for robust OPC

Shumay Shang, Yuri Granik, Nicolas Cobb, Wilhelm Maurer, Yuping Cui, Lars Liebmann, James Oberschmidt, Rama Singh, Ben Vampatella

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485478

KEYWORDS: Optical proximity correction, Data modeling, Printing, Image processing, Visualization, Calibration, Binary data, Solids, Failure analysis, Process modeling

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Proceedings Article | 27 December 2002 Paper

Alternatives to alternating phase-shift masks for 65 nm

J. Andres Torres, Wilhelm Maurer

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467782

KEYWORDS: Photomasks, SRAF, Optical proximity correction, Lithography, Resolution enhancement technologies, Phase shifts, Binary data, Manufacturing, Nanoimprint lithography, Lithographic illumination

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Proceedings Article | 16 August 2002 Paper

OPC aware mask and wafer metrology

Wilhelm Maurer, Vincent Wiaux, Rik Jonckheere, Vicky Philipsen, Thomas Hoffmann, Staf Verhaegen, Kurt Ronse, Jonathan England, William Howard

Proceedings Volume 4764, (2002) https://doi.org/10.1117/12.479350

KEYWORDS: Optical proximity correction, Photomasks, Lithography, Metrology, Image processing, Scanning electron microscopy, Semiconducting wafers, Image analysis, Transistors, Line edge roughness

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Proceedings Article | 30 July 2002 Paper

Assessment of OPC effectiveness using two-dimensional metrics

Vincent Wiaux, Vicky Philipsen, Rik Jonckheere, Geert Vandenberghe, Staf Verhaegen, Thomas Hoffmann, Kurt Ronse, William Howard, Wilhelm Maurer, Moshe Preil

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474588

KEYWORDS: Reticles, Optical proximity correction, Photomasks, Scanning electron microscopy, Semiconducting wafers, Critical dimension metrology, Optical lithography, Metrology, Printing, Logic

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A complete evaluation of the optical proximity effects (OPE) and of their corrections (OPC) requires a quantitative description of two-dimensional (2D) parameters, both at resist- and at reticle-level. Because the 2D behaviour at line-ends and at line-corners can become a limiting factor for the yield, it should be taken into account when characterising a process, just as the CD- and pitch-linearity are already kept under control. This implies the measurement of 2D-metrics in a precise way. We used an SEM Image Analysis tool (ProDATA SIAM) to define and measure various OPC-relevant metrics for a C013 process. For the METAL (M1) process, we show that the overlap between line-ends of M1-trenches and underlying nominal contacts is a relevant metric to describe the effectiveness of hammerheads. Moreover, it is an interesting metric to combine with the CD process window. For the GATE process, we demonstrate that for a given set of metrics there is a degree of OPC aggressiveness beyond which it is not worth to go. We considered both line-end shortening (LES) and corner rounding affecting the poly linewidth close to a contact pad, and this on various logic circuits having received different degrees of fragmentation. Finally the knowledge of the actual line-end contour on the reticle allows one to simulate separately the printing effect of that area loss at reticle line-ends. The area loss measured by comparing the extracted contour to the target one is regarded as a combination of pull-back and area loss at corners. For our C013 gate process, and for the 130nm lines at a 1:1.25 duty cycle, those two parameters contribute together to approximetely 40% of the measured LES in the resist. This fact raises the question of specifications on 2D reticle parameters. We also find a linear correlation between the area loss at reticle line-end corners and the corresponding increase of LES on the wafer, which suggests a way towards putting specifications on the reticle line-ends.

Proceedings Article | 22 January 2001 Paper

FIB-based local deposition of dielectrics for phase-shift mask modification

Heinz Wanzenboeck, Martin Verbeek, Wilhelm Maurer, Emmerich Bertagnolli

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410688

KEYWORDS: Silicon, Oxides, Gallium, Quartz, Ions, Ion beams, Photomasks, Phase shifts, Etching, Deposition processes

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Proceedings Article | 5 July 2000 Paper

Optimizing edge topography of alternating phase-shift masks using rigorous mask modeling

Christoph Friedrich, Leonhard Mader, Andreas Erdmann, Steffen List, Ronald Gordon, Christian Kalus, Uwe Griesinger, Rainer Pforr, Josef Mathuni, Guenther Ruhl, Wilhelm Maurer

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388969

KEYWORDS: Photomasks, Quartz, Etching, Chromium, Phase shifts, Critical dimension metrology, Picosecond phenomena, Finite-difference time-domain method, Semiconducting wafers, Lithography

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Proceedings Article | 3 February 2000 Paper

Mask error enhancement factor

Wilhelm Maurer

Proceedings Volume 3996, (2000) https://doi.org/10.1117/12.377094

KEYWORDS: Photomasks, Lithography, Optical lithography, Printing, Chromium, Semiconducting wafers, Mask making, Phase shifts, Deep ultraviolet, Photoresist processing

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Proceedings Article | 30 December 1999 Paper

Proximity effects of alternating phase-shift masks

Wilhelm Maurer, Christoph Friedrich, Leonhard Mader, Joerg Thiele

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373330

KEYWORDS: Optical proximity correction, Photomasks, Lithography, Phase shifts, Chromium, Optical lithography, Etching, Printing, Deep ultraviolet, Semiconducting wafers

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Proceedings Article | 26 July 1999 Paper

Integration of alternating phase-shift mask technology into optical proximity correction

Joerg Thiele, Christoph Friedrich, Christoph Dolainsky, Paul Karakatsanis, Wilhelm Maurer

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354367

KEYWORDS: Optical proximity correction, Chromium, Phase shifts, Photomasks, Critical dimension metrology, Lithography, Binary data, Image segmentation, Computer simulations, Printing

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Proceedings Article | 26 July 1999 Paper

Application of a new approach to optical proximity correction

Anja Rosenbusch, Andrew Hourd, Casper Juffermans, Hartmut Kirsch, Frederic Lalanne, Wilhelm Maurer, Carmelo Romeo, Kurt Ronse, Patrick Schiavone, Michal Simecek, Olivier Toublan, Tom Vermeulen, John Watson, Wolfram Ziegler, Rainer Zimmermann

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354378

KEYWORDS: Optical proximity correction, Etching, Semiconducting wafers, Inspection, Deep ultraviolet, Reticles, Critical dimension metrology, Manufacturing, Mathematical modeling, Mask making

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Proceedings Article | 26 July 1999 Paper

Evaluating the potential of alternating phase-shift masks using lithography simulation

Christoph Friedrich, Klaus Ergenzinger, Fritz Gans, Andreas Grassmann, Uwe Griesinger, Juergen Knobloch, Leonhard Mader, Wilhelm Maurer, Rainer Pforr

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354371

KEYWORDS: Photomasks, Lithography, Solids, Phase shifts, Semiconducting wafers, Quartz, Etching, Scanning electron microscopy, Chromium, Deep ultraviolet

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Proceedings Article | 18 December 1998 Paper

New approach to optical proximity correction

Proceedings Volume 3546, (1998) https://doi.org/10.1117/12.332856

KEYWORDS: Optical proximity correction, Reticles, Photomasks, Inspection, Data modeling, Manufacturing, Deep ultraviolet, Logic, Semiconducting wafers, Etching

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Proceedings Article | 18 December 1998 Paper

Mask specifications and OPC

Wilhelm Maurer, Christoph Friedrich

Proceedings Volume 3546, (1998) https://doi.org/10.1117/12.332831

KEYWORDS: Photomasks, Optical proximity correction, Lithography, Manufacturing, Deep ultraviolet, Mask making, Standards development, Error analysis, Chlorine, Chromium

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Proceedings Article | 29 June 1998 Paper

Benchmarking of software tools for optical proximity correction

Angelika Jungmann, Joerg Thiele, Christoph Friedrich, Rainer Pforr, Wilhelm Maurer

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310721

KEYWORDS: Optical proximity correction, Photomasks, Data modeling, Logic, Semiconducting wafers, Mask making, Inspection, Data processing, Etching, Resistance

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Proceedings Article | 29 June 1998 Paper

Process proximity correction using an automated software tool

Wilhelm Maurer, Christoph Dolainsky, Joerg Thiele, Christoph Friedrich, Paul Karakatsanis

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310754

KEYWORDS: Process modeling, Data modeling, Optical proximity correction, Photomasks, Software development, Lithography, Mask making, Data processing, Mathematical modeling, Reticles

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Proceedings Article | 7 July 1997 Paper

Application of a simple resist model to fast optical proximity correction

Christoph Dolainsky, Wilhelm Maurer

Proceedings Volume 3051, (1997) https://doi.org/10.1117/12.275995

KEYWORDS: Optical proximity correction, Photoresist processing, Data modeling, Computer simulations, Etching, Coherence (optics), Data processing, Lithography

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Proceedings Article | 12 February 1997 Paper

Evaluation of resist models for fast optical proximity correction

Christoph Dolainsky, Wilhelm Maurer, Thomas Waas

Proceedings Volume 3236, (1997) https://doi.org/10.1117/12.301192

KEYWORDS: Optical proximity correction, Photomasks, Lithography, Photoresist processing, Mask making, Manufacturing, Etching, Head, Image processing, Silver

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Proceedings Article | 12 February 1997 Paper

Comparison of line shortening assessed by aerial image and wafer measurements

Wolfram Ziegler, Rainer Pforr, Joerg Thiele, Wilhelm Maurer

Proceedings Volume 3236, (1997) https://doi.org/10.1117/12.301203

KEYWORDS: Photomasks, Head, Semiconducting wafers, Atomic force microscopy, Reticles, Deep ultraviolet, OLE for process control, Data corrections, Critical dimension metrology, Lithography

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Proceedings Article | 27 December 1996 Paper

Mask specifications for 193-nm lithography

Wilhelm Maurer

Proceedings Volume 2884, (1996) https://doi.org/10.1117/12.262841

KEYWORDS: Photomasks, Lithography, Semiconducting wafers, Error analysis, Printing, Chromium, Optical lithography, Optics manufacturing, Structural design, Process control

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It is now generally accepted, that optical lithography will be the mainstream approach to manufacture the I Gbit DRAM device generation with minimum features between I 80 nm (first working samples) and I 50 nm (projected fabrication). This development demands a considerable tightening of mask specifications. The printing of 180 nm I 150 nm features on a 193 nm-, 0.6 NA- tool is a highly non-linear pattern transfer process (ki = 0.56 I 0.47). Therefore, mask irregularities (defects, linewidth variations) will print easier than at larger dimensions. This paper presents results of full lithography simulations for the printability of mask linewidth variations and mask defects. Assuming, that the wafer linewidth error budget is shared between the lithography process and the mask as it is currently done (75% for the process, 25% for the mask), the linewidth uniformity on a mask has to be better than 12 nm for 180 nm designrules and better than 8 nm for 150 nm designrules. Masks have to have no defects larger than 100 nm resp. 70 nm (all those numbers are given at the 4x mask!). These numbers are almost a factor of 2 tighter than assumed in published mask specification roadmaps. Besides tightening the current specifications, the mask roadmap has to include other important parameters: We show, that the butting error of the mask writing tool, corner rounding, and the quality of the mask repair have substantial impact on the linewidth error on the wafer. Since mask defects print proportional to the squareroot of their area, the definition of mask repair quality has to be revised. Current mask repair processes cannot provide adequate repair quality. Since masks with these specifications are - in our point of view - not easy to make, we propose to reevaluate carefully the sharing of the wafer Iinewidth error budget. In other words, 193 nm lithography must dedicate a significantly larger portion of its (actually not so large) process window to the mask. Keywords: Optical Lithography, Mask Specifications, Mask Defect Printability, Mask Repair, Linewidth Error Budget

Proceedings Article | 27 December 1996 Paper

Evaluation of a fast and flexible OPC package: OPTISSIMO

Wilhelm Maurer, Thomas Waas, Hans Eisenmann

Proceedings Volume 2884, (1996) https://doi.org/10.1117/12.262826

KEYWORDS: Optical proximity correction, Lithography, Precision calibration, Photomasks, Deep ultraviolet, Optics manufacturing, Etching, Data corrections, Manufacturing, Semiconductors

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Proceedings Article | 7 June 1996 Paper

Pattern transfer at k1=0.5: get 0.25-um lithography ready for manufacturing

Wilhelm Maurer, Kimihiro Satoh, Donald Samuels, Thomas Fischer

Proceedings Volume 2726, (1996) https://doi.org/10.1117/12.240904

KEYWORDS: Photomasks, Lithography, Semiconducting wafers, Chromium, Manufacturing, Photoresist processing, Scanning electron microscopy, Image processing, Etching, Printing

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Proceedings Article | 8 December 1995 Paper

Good OPC, where will this drive mask CD tolerance and mask grid size

Donald Samuels, Wilhelm Maurer, Timothy Farrell

Proceedings Volume 2621, (1995) https://doi.org/10.1117/12.228213

KEYWORDS: Photomasks, Optical proximity correction, Critical dimension metrology, Lithography, Sodium, Semiconducting wafers, Tolerancing, Scanning electron microscopy, Manufacturing, Semiconductors

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Proceedings Article | 3 November 1994 Paper

Masks for 0.25-um lithography

Wilhelm Maurer, Donald Samuels

Proceedings Volume 2254, (1994) https://doi.org/10.1117/12.191936

KEYWORDS: Photomasks, Lithography, X-ray technology, Phase shifts, X-rays, Optical lithography, Printing, Mask making, Tolerancing, X-ray imaging

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Proceedings Article | 1 June 1992 Paper

Metrology on phase-shift masks

Klaus-Dieter Roeth, Wilhelm Maurer, Carola Blaesing-Bangert

Proceedings Volume 1673, (1992) https://doi.org/10.1117/12.59794

KEYWORDS: Photomasks, Phase shifts, Metrology, Chromium, Critical dimension metrology, Manufacturing, Lithography, Tolerancing, Integrated circuits, Inspection

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Proceedings Article | 1 June 1990 Paper

Increasing the dimensions of metrology

Wilhelm Maurer, Carola Blaesing-Bangert, Hans-Helmut Paul

Proceedings Volume 1261, (1990) https://doi.org/10.1117/12.20071

KEYWORDS: Photomasks, Metrology, Overlay metrology, Process control, Semiconducting wafers, Integrated circuits, Inspection, Error analysis, Lithography, Calibration

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Showing 5 of 36 publications

Proceedings Volume Editor (5)

SPIE Conference Volume | 1 October 2013

29th European Mask and Lithography Conference

SPIE Conference Volume | 10 May 2012

28th European Mask and Lithography Conference

SPIE Conference Volume | 13 October 2011

Photomask Technology 2011

SPIE Conference Volume | 24 September 2010

Photomask Technology 2010

SPIE Conference Volume | 14 May 2010

26th European Mask and Lithography Conference

Conference Committee Involvement (28)

30th European Mask and Lithography Conference

24 June 2014 | Dresden, Germany

Optical Microlithography XXVII

25 February 2014 | San Jose, California, United States

SPIE Photomask Technology

10 September 2013 | Monterey, California, United States

29th European Mask and Lithography Conference

25 May 2013 | Dresden, Germany

Optical Microlithography XXVI

26 February 2013 | San Jose, California, United States

Photomask Technology

11 September 2012 | Monterey, California, United States

Optical Microlithography XXV

14 February 2012 | San Jose, California, United States

28th European Mask and Lithography Conference (EMLC 2012)

17 January 2012 | Dresden, Germany

Photomask Technology

19 September 2011 | Monterey, California, United States

Optical Microlithography XXIV

1 March 2011 | San Jose, California, United States

Photomask Technology

13 September 2010 | Monterey, California, United States

SPIE Photomask Technology

13 September 2010 | Monterey, United States

Optical Microlithography XXIII

23 February 2010 | San Jose, California, United States

26th European Mask and Lithography Conference

18 January 2010 | Grenoble, France

Photomask Technology

15 September 2009 | Monterey, California, United States

Optical Microlithography XXII

24 February 2009 | San Jose, California, United States

Photomask Technology

7 October 2008 | Monterey, California, United States

Optical Microlithography XXI

26 February 2008 | San Jose, California, United States

Photomask Technology

18 September 2007 | Monterey, California, United States

Optical Microlithography XX

27 February 2007 | San Jose, California, United States

Photomask Technology

19 September 2006 | Monterey, California, United States

Optical Microlithography XIX

21 February 2006 | San Jose, California, United States

Photomask Technology

3 October 2005 | Monterey, California, United States

Optical Microlithography XVIII

1 March 2005 | San Jose, California, United States

Photomask Technology

14 September 2004 | Monterey, California, United States

Optical Microlithography XVII

24 February 2004 | Santa Clara, California, United States

Photomask Technology

9 September 2003 | Monterey, California, United States

Photomask Technology

1 October 2002 | Monterey, CA, United States

Showing 5 of 28 Conference Committees

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