Mr. Xiaojing Shi Profile

Xiaojing Shi

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Proceedings Article | 3 February 2009 Paper

A novel resonant pressure sensor with boron diffused silicon resonator

Junbo Wang, Xiaojing Shi, Lei Liu, Zhengwei Wu, Deyong Chen, Jinmin Zhao, Shourong Li

Proceedings Volume 7159, 71590C (2009) https://doi.org/10.1117/12.811759

KEYWORDS: Sensors, Silicon, Electrodes, Boron, Resonators, Signal to noise ratio, Finite element methods, Sensor performance, Packaging, Microelectromechanical systems

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To improve the performance of the micro-machined resonant pressure sensor and simplify its fabrication process, a novel structure is proposed in which the boron diffused silicon (up to 15um thickness) and the bulk silicon are used as the resonant beam and pressure membrane respectively. The structural parameters were optimized through FEM to achieve the better sensitivity, and the relationships between the structural parameters and the sensitivity were established. Moreover, the fabrication processes were discussed to increase the product rate and the pressure sensor with the optimal structural parameters was fabricated by the bulk silicon MEMS processes. In order to enhance the signal of the sensor and make the closed-looped control of the sensor easily, electromagnetic excitation and detection was applied. However there is so high noise coming from the distributing capacitances between the diffused silicon layer and electrodes that reduce the signal to noise ratio of the sensor. Through the analysis of the micro-structure of the sensor, the asymmetrical excitation circuit was used to reduce the noise and then the detection circuit was designed for this sensor. The resonator of the sensor was packaged in the low vacuum condition so that the high quality factor (Q) with about 10000 can be achieved. Experimental tests were carried out for the sensor over the range of -80kPa to 100kPa, the results show that the sensitivity of the sensor is about 20kHz/100kPa, the sensitivity is 0.01%F.S. and the nonlinearity is about 1.8%.

Proceedings Article | 3 February 2009 Paper

Optimization of a novel structure for micromachined resonant pressure sensor

Xiaojing Shi, Deyong Chen, Junbo Wang, Zhengwei Wu

Proceedings Volume 7159, 715905 (2009) https://doi.org/10.1117/12.807588

KEYWORDS: Sensors, Silicon, Resonators, 3D modeling, Optical simulations, Wet etching, Device simulation, Boron, Electrodes, Environmental sensing

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A novel resonant pressure sensor structure is proposed to achieve better performance in quality factor (Q) and output stability. Diffused silicon (15um) is used for the resonator, thus the resonator and the pressure diaphragm can be fabricated on the same silicon substrate without bonding. A differential detection tri-resonator structure is adopted to reduce the output drift and increase the sensitivity. To optimize the structure, a simplified 2-D model is set up for the theoretical analysis. In addition, 3-D models of the 'H' style beam and the entire structure which is composed of a diaphragm and three groups of beam respectively doubly supported by the anchors are constructed for the ansys-FEA simulation. Through the theoretical analysis and the simulation, the structure parameters (beam length, beam thickness, diaphragm thickness etc) are optimized. The natural frequency of the optimized model is 86.7 KHz, and the sensitivity is 19 KHz per 0.1MPa. The sensor is fabricated with the optimized parameters. The test experiments show that the results basically correspond with the simulation results except the effect of the wet etching in the fabrication process. The quality factor is 10000 in low vacuum, and the resolution is 1/10000.

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