We proposed a symmetric V-type slit array to tune the propagation direction of surface plasmon polaritons by external control of the polarization and/or the inclination angle of the incident light. Using theoretical analysis and numerical simulation, we studied the position-related phase and spin-related phase of the SPPs excited by an inclined and circularly polarized light through a column of slits to determine the parameter of the structure. The results showed that we can tune the propagation of the SPPs with significant flexibility, by changing the polarization of the incident light and the inclination angle of the incident light. Furthermore, a nanostructures were designed to control directional launching of surface plasmons based on the principle of optical spin’s effect for the geometric phase of light. The propagation direction of the generated SPPs can be controlled by the spin of photons. The total size of the surface plasmon polariton (SPP) launcher is 320 nm by 180 nm, which is far smaller than the wavelength of the incident light. This result may provide a new way of spin-controlled directional launching of SPP.
KEYWORDS: Near field scanning optical microscopy, Gallium nitride, Light emitting diodes, Near field, Near field optics, Waveguides, Photonic crystals, Photonic microstructures, Optical microscopy, Radio propagation
We propose and realize a micro-cylinder mode in photonic quasicrystal (PQC) on the top of an edge-emitting GaN light
emitting diodes (LEDs) with 30 μm indium tin oxides (ITO) covered and 8 μm GaN exposed broad-stripe. A
well-defined hexagon-like localized state following a C6v symmetry is identified from the PQC micro-cylinder arrays.
Enhancement factor of the surface light extraction from 12-fold PQC patterns on electrical current injected GaN-based
light emitters is 2.4 times higher than non-patterned regions, which is observed by scanning near-field optical
microscopy (SNOM). According to the near-field optical images, micro-cylinders can be considered as nano-optics
sources because the electromagnetic energy is strongly concentrated due to the wave guide modes and the beaming effect
of the surface microstructures.
We present three-dimensional simulations of the image formation of microstructure in near-field optical microscopy with the three-dimensional finite-difference time-domain method (FDTD). First, we calculated the intensity distributions inside and outside and the flux densities for both the tapered and parabolic fiber probes used in near-field optical microscope and nanolithography. The calculating result shows that for different kinds of shape the intensity distributions in both probes are similar and present standing wave forms; but the amplitudes and locations of peaks of the standing waves are different from each other. The intensity outward parabolic probe is higher than that outward tapered probe. Then we computed the intensity distributions of the samples which are composed of different materials by different polarization illumination. Assuming an aperture-type probe in collection-mode near-field microscope, we compare the images produced from the sample composed of three dielectric blocks in nanometer at a distance of 25nm and 150nm, respectively, under constant-high-scanning mode along with the direction of the polarization of the illuminating light, with near-field distribution of the sample without probe. The results show that the probe disturbs the original field distribution of the sample. The received signal is different from the original field distribution of the sample. However the received signal contains high frequency information of the sample in near-field region. Due to probe-sample interaction, parts of evanescent field transform into propagation wave. Only the interaction between the probe and sample in the near field makes possible to probe the high-frequency components and achieve the super-resolution. Therefore, the detected resolution depends on an assembly of the tip size, shape of the tip, distance between tip and sample, relative position and material characteristics of both tip and sample. These results provide the basis for correct interpretation of experimental work.
The electro-luminescence (EL) properties of InGaN/GaN multiple quantum wells (MQWs) light emitting diodes (LEDs) with various emitting wavelength (purple, blue and green) were studied by scanning near-field optical microscope (SNOM). The high spatial resolution EL SNOM mappings and near-field spectra of the LEDs were acquired at various injection current conditions. The experiment shows that, though there are some common points, the EL properties of various LEDs are quite different. (i) The EL mappings show that the MQWs emission is spatially inhomogenous, which contain many islands like bright spots. (ii) The sizes of the bright spots are different ranging from 0.1 μm to 1μm, the LED with longer emitting wavelength has larger bright spots. (iii) The injection current dependences of the shape of the bright spots of various LEDs are different. (iv) The emission wavelengths of brighter spots are longer in the same LED. (v) Increasing the injection current, the full widths at half maximum (FWHM) of the EL spectra grow larger. With the same injection current, the green LED has larger FWHMs than the blue and purple ones. (vi) Increasing the injection current, the blue shift of the green LED is obviously (~60 meV), but those of the blue one and purple are negligible. The phenomena above suggest that, the self-organized In-rich regions play a key role in the emission of all the InGaN/GaN MQWs LEDs, though they have different influences on the emission properties of the three LEDs with various emission wavelengths. One possible explanation is that, in the blue and purple LEDs, because the size of the In-rich areas are small, the quantum confined Stark effect caused by the piezoelectric field is negligible; but in the green LED, the In-rich areas are larger, the quantum confined Stark effect is obvious which caused the blue shift phenomenon. And in all LEDs, the band filling effect makes the FWHMs of the emission spectra larger. The results also show that SNOM is a powerful tool to study the local light emission properties at nanometer scale.
Total internal reflection fluorescence microscope is a new optical microscopic system based on near-field optical theory. Its character of illumination by evanescent wave, together with the great signal-to-noise ratio and temporal resolution achieved by high quality CCD, allows us to analyze the spatiotemporal details of local Ca2+ dynamics within the nanoscale microdomain surrounding different Ca2+ channels. We have recently constructed a versatile objective TIRFM equipped with a high numerical aperture (NA=1.45) objective. Using fluo-4 as the Ca2+ indicator, we visualized the near-membrane profiles of Ca2+ waves and elementary Ca2+ sparks generated by Ca2+ release channels in rat ventricular myocytes. Different from those detected using conventional and confocal microscopy, Ca2+ waves observed with TIRFM exhibited fine inhomogenous substructures composed of fluctuating Ca2+ sparks. The anfractuous routes of spark recruitment suggested that the propagation of Ca2+ waves is much more complicated than previously imagined. We believe that TIRFM will provide a unique tool for dissecting the microscopic mechanisms of intracellular Ca2+ signaling.
KEYWORDS: Near field, 3D modeling, Dielectric polarization, Finite-difference time-domain method, 3D image processing, Near field scanning optical microscopy, Dielectrics, Wave propagation, Near field optics, Electromagnetism
We present three-dimensional simulations ofthe image formation of periodic structure in near-field optical microscopy with the three-dimensional finite-difference time-domain method (FDTD). Our calculations consider three cases for samples with different periods a with respect to the propagation wavelength X: (1) ?>?; (2) ?=?; (3) ?. It is shown in the results, when ?>?, the image ofthe sample can be obtained in the Talbot plane; while ?=? or ?, there are no clear images anymore. This means that there is no Talbot effect in subwavelength periodic structure. Therefore, it is demonstrated that Talbot effect is not the reason of super-resolution in near-field optical microscope.
KEYWORDS: Semiconducting wafers, Scanning electron microscopy, Quantum wells, Luminescence, Etching, Waveguides, Near field optics, Optical microcavities, Cladding, Atomic force microscopy
OPtical microdisk is based on circularly symmetric micro- resonator and featured of the 'whispering-galley' modes with high quality of factor Q. However, the non-preferred directional emission and lack of high output from the disk are its drawbacks for application. Recently, a remarkable advance in the novel deformed microdisk laser at middle-IR wavelength is highly attractive. In this report, as a preliminary try for microdisk at visible range, the InGaAlP quantum well circular cylindrical and deformed microdisks with radii about 2.5 to 10 micrometers emitting at wavelength of 0.62-0.67 micrometers were prepared by electron beam lithography and wet etching processing etc. The optical emission properties of these microdisks and studied by employing the scanning electron microscopy, atomic force microscopy, fluorescence image microspace and scanning near-field optical microscopy etc. The preferential emission in these deformed microdisks was visually observed. When the cross section of microdisk was gradually deformed from circle, the change of fluorescence image from uniform ring towards 2 or 4 favorable emission along the circumference of microdisks was confirmed. The deformation could be caused by either the shape or etching profile of the disk waveguide. In addition, the microdisks patterned with some microstructures were proposed.
KEYWORDS: Near field scanning optical microscopy, Near field optics, Optical properties, Indium gallium nitride, Quantum wells, Luminescence, Excitons, Optical microcavities, Optical filters, Ion beams
In0.22Ga0.78N/In0.06N multiple quantum well (MQW) microdisks with a size of 5.6 micrometers in diameter have been fabricated by photolithography and ion beam etching. Time-resolved photoluminescence (PL) has been employed to study optical transitions in MQW structure and microdisk. The dominant emission from both MQW structures and microdisks were from localized exciton transitions. It was found in the microdisks that the low energy shoulder of the PL spectrum was quenched, and that the spontaneous emission line width was narrower while its intensity was enhanced with respect to that of the MQWs, which may be related to microcavity effects in the microdisks. A blue shift of the PL peak from the MQW microdisks compared with that in the MQW structures was also observed, and can be understood in terms of a reduced piezoelectric field due to strain relief in the microdisks. Microdisks with grating patterned micro- couplers around the disks edges were also fabricated by e- beam lithography to enhance light extraction from the microdisks. Near-field scanning optical microscopy was employed to make the near-field fluorescence images of the microdisks, which showed a strong emission preference in certain directions. The potential applications of III- nitride microdisks for optical interconnects and integration are also discussed.
KEYWORDS: Near field scanning optical microscopy, Near field optics, Near field, Scanners, Nitrogen, Head, Signal detection, Cryogenics, Spectroscopy, Imaging spectroscopy
We have constructed a versatile low temperature scanning near-field optical microscope with the capability of near- field spectroscopy, operating at liquid nitrogen (LN) temperature. The compact low temperature scanning head was built on one piece of Marco with a unique linear nano-motor as the coarse approach. A tuning fork mechanism was adopted to detect and regulate the fiber tip-sample separation. The x-y scan can be performed either by the single tube scanner on triple tube scanner, depending on the application. A double shield dewar was used where the outer chamber was filled with LN. The core chamber was evacuated before cooling and then filled with cooled nitrogen gas, hence the working temperature can be controlled at around 80 K. A special designed coaxial double lens was used to introduce the illumination beam through a 200-micron fiber; the detected optical signal was transmitted via a fiber tip to a PMT or an APD. The performance test shows the stability of the new design. The resolution of shear force imaging and optical image of standard sample are shown.
KEYWORDS: Near field, Near field optics, Gallium nitride, Luminescence, Indium gallium phosphide, Indium gallium nitride, Semiconductors, Near field scanning optical microscopy, Optical microscopy, Optical microcavities
Microcavity shows the growing importance of the intensity enhancement, inhibition and spectral narrowing of spontaneous emission. The advantages of microcavity lasers are the very low threshold and small size. We have fabricated three types of semiconductor microdisks: InGaP, GaN, and InGaN multi-quantum-well microdisk with sun-like E- beam resist microstructure. The diameters are ranging from 5 - 20 micros. The photoluminescence of those microdisks in far-field and near-field observation are compared. Far-field fluorescence imaging shows bright emission of fluorescence around the circumference of the microdisks that can be interpreted as whispering-gallery mode in the disks. However, due to the different disk structures, near-field fluorescence images give several other different views of the light distribution of the microdisks corresponding to different optical modes in the disks. A theoretical calculation of the light distribution of InGaP microdisk based on the theory of optical modes in microdisk lasers is presented in this paper. The near-field mapping of the InGaN microdisks with sun-like E-beam resist structure demonstrates the possibility of using gratings made on the circumference to achieve directional emission without lowering output power.
KEYWORDS: Near field scanning optical microscopy, Finite-difference time-domain method, Dielectric polarization, Metals, 3D modeling, Near field optics, Maxwell's equations, Optical fibers, Electromagnetism, Scanning electron microscopy
Scanning near-field optical microscope (SNOM) can provide optical imaging with ultrahigh resolution owing to its breakthrough the limit of optical diffraction. Metal coated optical fiber probe in nano-scale is one of the most important parts in aperture type of SNOM. Tip diameter and structure determine the final spatial resolution and experimental utility of SNOM. In order to understand the behavior of light propagation in the probes, we have investigated two kinds of 3D probe models (metal coated and uncoated) by solving Maxwell equations with the Finite- Difference Time-Domain method. The 3D computation reveals that the field distribution of light in the probes are some patterns due to the polarization of light and the structure of the probe. This result can guide to find optimized tip design.
KEYWORDS: Near field scanning optical microscopy, Near field optics, Near field, Imaging spectroscopy, Spectroscopy, Physics, Scanning tunneling microscopy, Optical microscopes, Spectroscopes, Ultrasonics
The progress of near-field optics research and its application in some Chinese universities and institutions is overviewed. The research activities on the instrumentation aspect of scanning near-field optical microscope, novel sample-tip regulation mechanism, fiber-tip preparations, high resolution imaging and near-field spectroscopy in confined mesoscopic systems, light emission new materials and devices, theoretical development of near-field light- matter interactions, new observations of physical phenomena in the near-field region, optical nanostructuring, are summarized. The current research projects and future prospective of the possible application of SNOM and near- field fluorescence imaging to biology, such as the in vitro cell nuclear assembly and apoptosis as well as gene recognition and DNA sequencing, and opto-electro devices are discussed.
KEYWORDS: Indium gallium phosphide, Near field scanning optical microscopy, Luminescence, Near field optics, Near field, Spectroscopy, Optical microscopy, Optical microcavities, Liquids, Nitrogen
Microcavity shows the growing importance of the intensity enhancement, inhibition nd spectral narrowing of spontaneous emission. The advantages of microcavity lasers are the very low threshold and small size. We have fabricated InGaP microdisks with radius of about 5 micrometers . The photoluminescence of our InGaP microdisks in far-field and near-field observation are compared. A strong enhancement of the photoluminescence intensity in the microdisks with respect to that of the un-patterned sample of the same epitaxial wafer is obtained. Far-field fluorescence imaging shows a bright red emission of fluorescence around the circumference of the microdisk. Simultaneous acquisition of near-field image and topography gives the correlation of the sample surface and light distribution. The optical disk mode pattern in our InGaP microdisks can be interpreted as whispering-gallery mode and the mixture of other modes.
KEYWORDS: Gallium nitride, Near field, Spectroscopy, Diodes, Near field scanning optical microscopy, Annealing, Near field optics, Luminescence, Optical microscopy, Optical spectroscopy
The light emitting properties of GaN blue light diode has been characterized by near-field optical microscopy, near- field spectroscopy and conventional spectroscopy. Since the mechanism of the light mission from this material with high defect density is not yet fully understand, it is necessary to study the optical properties in conjunction with the nano-scale structure. The conventional spectroscopic methods are limited by the diffraction barrier, hence the information of the correlation of light emission and defects is not sufficient. By using near-field spectroscopy and near-field optical microscopy, we have studied the electro- emission spectrum of GaN blue diode, which is fabricated on sapphire substrate using low-pressure MOCVD epitaxy technique in our lab. The results how that the near-field spectroscopy can provide spatially resolved local spectrum of the samples surfaces with sub-wavelength resolution and hence provide a new technique to study the mechanism of light emission at nanometer scale. The dependence of light emission intensities vs. injection currents in the near- field spectra reveals the donor levels of the energy bands in GaN blue diode.
Near-field optics has drawn wide attention in the last 10 years since it provides the possibilities of ultra-high resolution exceed the optical diffraction limit and local optical imaging and spectroscopy at the nanometer scale. One key problem in developing new type of scanning near-field optical microscope (SNOM) is the method of tip-sample regulation, which can keep the detecting tip in the near-field regime and should have little or no optical interference with the signals to be detected.
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