The relation of the local structure of the phase-change recording material and the interface layer has not been
clarified while we already reported that the interface layer affects the electronic state of recording material by
using the HX-PES method. It is necessary to understand more detailed physical phenomenon for crystallization
mechanism of recording layer in order to develop the high-speed and higher density rewritable optical
recording media. The influence of the interface layer to the local structure for atomic arrangement of a GeBiTe
phase-change material was investigated by using XAFS on the actual rewritable HD DVD media. The XAFS
signal and EXAFS oscillation from the actual media is obtained nondestructively. It has been shown that the
interface layer influence slightly the local atomic arrangement of the recording layer, while the electronic state
of recording layer is changed by the presence of the interface layer.
We have developed a single-side dual-layer rewritable HD DVD media having a larger capacity of 40 GB
(20 GB per layer) for the optical system with the NA of 0.65 and the wavelength of 405 nm, and achieved the
good recording characteristics. For both layers, the same track pitch of 0.34 μm as HD DVD-RAM was used.
We applied more accurate thermal analysis to the dual-layer rewritable media. It was expected that the effect
of the cross-erase was very small. By optimizing thermal balance of dual-layer media, the good recording
characteristics were obtained for both layers with enough tilt margins. The feasibility of the dual-layer
rewritable media of 40 GB user data capacity was shown for HD DVD system.
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