Prof. Yong-Gang Zhang Profile

Prof. Yong-Gang Zhang

at SIMIT

SPIE Involvement:

Author

Publications (4)

Proceedings Article | 7 September 2017 Presentation + Paper

Extended wavelength InGaAs SWIR FPAs with high performance

Xue Li, Tao Li, Chunlei Yu, Hengjing Tang, Shuangyan Deng, Xiumei Shao, Yonggang Zhang, Haimei Gong

Proceedings Volume 10404, 104040C (2017) https://doi.org/10.1117/12.2273550

KEYWORDS: Indium gallium arsenide, Short wave infrared radiation, Sensors, Infrared detectors, Etching, Image quality, Infrared astronomy, Infrared radiation, Infrared sensors, Astronomy

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Proceedings Article | 24 June 2014 Paper

Extended wavelength InGaAs infrared detector arrays based on three types of material structures grown by MBE

Haimei Gong, Xue Li, Tao Li, Hengjing Tang, Ming Shi, Xiumei Shao, Yonggang Zhang

Proceedings Volume 9070, 90700C (2014) https://doi.org/10.1117/12.2048583

KEYWORDS: Sensors, Indium gallium arsenide, Infrared detectors, Etching, Detector arrays, Absorption, Silicon, Fabrication, Materials processing, Temperature metrology

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Proceedings Article | 27 February 2014 Paper

High performance InP-based InAs triangular quantum well lasers operating beyond 2 μm

Y. Gu, Y. G. Zhang, Y. Y. Cao, X. Y. Chen, Hsby. Li, L. Zhou

Proceedings Volume 9002, 90021E (2014) https://doi.org/10.1117/12.2043222

KEYWORDS: Quantum wells, Indium arsenide, Temperature metrology, Laser damage threshold, Continuous wave operation, Molecular beam epitaxy, Luminescence, Gallium, Quantum efficiency, Estimation theory

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Proceedings Article | 5 September 2002 Paper

Thermal analysis of ridge waveguide InAsP/InGaAsP MQW lasers by using finite-element method

Youjun He, Y. Zhang, K. Nan, Aizhen Li

Proceedings Volume 4913, (2002) https://doi.org/10.1117/12.482231

KEYWORDS: Finite element methods, Waveguide lasers, Waveguides, Optical simulations, Resistance, Semiconductor lasers, Thermal modeling, Thermal analysis, Laser applications, Process modeling

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Conference Committee Involvement (1)

Infrared Optoelectronics: Materials and Devices

4 September 2012 | Evanston, Illinois, United States

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