In this work, the exciton diffusion model coupled with a drift-diffusion solver is used to simulate three bilayer TTF-OLEDs devices, which triplet tank layer (TTL) is DMPPP (Device A), DCPPP (Device B), and PPC (Device C), respectively. The simulation results are matched to the experimental data, and the efficiency and loss mechanisms are studied. The main reason for IQE loss is triplet-polaron quenching (TPQ) and the ability of triplet diffusion. The experimental result of the device has a recorded 15.5% efficiency in TTF OLEDs, which are benefitted due to the high diffusion coefficient and fewer electrons accumulated in the converting layer to avoid the TPQ processes. This is due to the LUMO of PPC being matched to the second layer to avoid carrier accumulation at the interface. Device A has a good diffusion ability and low TPQ coefficients but suffers from electron accumulation at the interfaces. The worst case (B) has a low diffusion coefficient with a high TPQ coefficient, which has a weak triplet density in the NPAN layer to induce the TTF processes. Besides the bilayer studies, the single-layer structures are also studied to extract some key parameters for bilayer studies. It is interesting to find that material with high TPQ coefficients can quench the triplets to stop the triplet-singlet annihilation, which will have a higher efficiency in the single-layer material. However, it plays the opposite role in bilayer structures because triplets are quenched before they reach the NAPA layers.
A suitable model for OLED simulation is provided. We included the tail state model, field dependent model, and triplet conversion model at heterojunction interface into our developed simulator to provide academic free TCAD simulator for research society. The details of simulator, algorithm, and fitting to experimental results will be provided.
In AlGaN, the dominating emission polarization depends on the Al content. Generally speaking, a higher Al content leads to a stronger TM-polarized emission. Normally, the dominating emission polarization of an AlGaN layer changes from the TE polarization into the TM polarization when the emission wavelength is shorter than 300 nm. Because a TM-polarized photon propagate along the lateral dimension of a c-axis grown LED sample, its light extraction efficiency is lower, when compared with a TE-polarized photon. In this study, the material characterization techniques of transmission electron microscopy observation, reciprocal space mapping and omega-2theta scan in X-ray diffraction measurement, and geometric phase analysis are used for first identifying the existence of the high-Al layers (HALs) on both sides of a quantum well (QW) in three 3-period AlGaN QW structures of different deep-UV emission wavelengths. Then, optical analyses, including transmission and photoluminescence (PL) measurements, particularly the PL measurements under an applied stress along the sample c-axis, are undertaken for understanding the effects of such HALs on the band structures and hence the polarized emission behaviors of the samples. Simulation studies are also performed for providing the favorable comparisons with the experimental data. Basically, the HALs produce an extra compressive strain in the c-plane for lowering the heavy-hole (HH) band edge (lower than the edge of the split-off band) such that the TE-polarized emission through the electron transition between the conduction and HH band becomes dominating. In this situation, the light extraction efficiency of such a deep-UV light-emitting diode can be enhanced.
We present a model of carrier distribution and transport accounting for quantum localization effects in disordered semiconductor alloys. It is based on a recent mathematical theory of quantum localization which introduces a spatial function called localization landscape for carriers. These landscapes allow us to predict the localization of electron and hole quantum states, their energies, and the local densities of states. The various outputs of these landscapes can be directly implemented into a drift-diffusion model of carrier transport and into the calculation of absorption/emission transitions. This model captures the two major effects of quantum mechanics of disordered systems: the reduction of barrier height (tunneling) and lifting of energy ground states (quantum confinement), without having to solve the Schrödinger equation. Comparison with exact Schrödinger calculations in several one-dimensional structures demonstrates the excellent accuracy of the approximation provided by the landscape theory [1]. This approach is then used to describe the absorption Urbach tail in InGaN alloy quantum wells of solar cells and LEDs. The broadening of the absorption edge for quantum wells emitting from violet to green (indium content ranging from 0% to 28%) corresponds to a typical Urbach energy of 20 meV and is closely reproduced by the 3D sub-bandgap absorption based on the localization landscape theory [2]. This agreement demonstrates the applicability of the localization theory to compositional disorder effects in semiconductors.
[1] M. Filoche et al., Phys. Rev. B 95, 144204 (2017)
[2] M. Piccardo et al., Phys. Rev. B 95, 144205 (2017)
A numerical model for PEDOT:PSS/SiNW hybrid solar cell has been developed and the structure has been simulated and analyzed. The limiting factor leading to low open circuit voltage (Voc) in PEDOT:PSS/SiNW hybrid solar cell is investigated. By adding a p-type silicon layer into the device to create an electric field in the silicon layer, the recombination at interface is improved and the Voc increases. The efficiency is improved to over 15% and more optimized work can be done in the future.
The optical and electrical properties of a photonic-plasmonic nanostructure on the back contact of thin-film solar cells were investigated numerically through the three-dimensional (3D) finite-difference time-domain method and the 3D Poisson and drift-diffusion solver. The focusing effect and the Fabry-Perot resonances are identified as the main mechanisms for the enhancement of the optical generation rate as well as the short circuit current density. However, the surface topography of certain nanopattern structures is found to reduce the internal electrostatic field of the device, thus limiting charge collection. The optimized conditions for both optics and electronics have been analyzed in this paper.
The current crowding effect in AlGaN 275 nm deep UVLEDs has been investigated by using 2D drift diffusion solver and the Monte Carlo ray-tracing method. Optimized conditions for both lateral and vertical structure have been presented in this paper by changing the spacing between 2 fingers. To improve the light extraction efficiency, using graphene as the contact layer and removing the p-GaN layer have also been discussed here. Thus with the markable increasing of LEE, the external quantum efficiency can be improved to 37.8% in the textured vertical structure without p-GaN layer.
In this paper, we discussed the influence of the indium fluctuation to the efficiency droop in LEDs. Both the real and randomly generated indium fluctuation are used in the 3D simulation and compared to the uniform indium distribution quantum wells. We found that the electrical and optical properties in LEDs such as the carrier transport, radiative and Auger recombination, and the droop effect, are strongly affected by these nanoscale indium fluctuations.
This article studied the a-Si:H solar cell with a randomly rough surface for high-power conversion efficiency. A full 3D numerical modeling program developed by our group including 3D FD-TD for optics and 3D Poisson and drift-diffusion solver for electronic simulation are used to model the characteristics of a textured solar cell. The balance between the optical and electrical performance of the a-Si:H solar cell is studied in this work. For model verification, a solar cell with high 9.23 % power conversion efficiency is used to examine the model and parameters. This article figured out the electrical limit for the a-Si:H solar cell and studied the influence of different roughness scales.
We characterize the transport properties of [11-20] GaN/Ga2O3 nanowire (NW)-MOSFET epitaxially grown on
(0001) sapphire substrates. When passivated with 10nm-thick Ga2O3 on the {1-10-1 }GaN triangular facets, the 50 nm-dia.
Ga2O3/GaN NW-MOSFET with 50nm gate length exhibits a saturation current of 130 μA, transconductance of 64 μS,
current on/off ratio of 104, subthreshold swing of 100mV/dec, and unity current (power) gain bandwidth fT (fMAX) at 150
(180)GHz. Using a 3D diffusion and drift model analysis, we found that the short channel effect in a Lg=50nm
Ga2O3/GaN NW-MOSFET at an aspect ratio of 5 was suppressed due to contribution from polarization-induced negative
space charge of -2.8×1012 cm2 at the abrupt crystalline interface between GaN NW and sapphire. The superior DC
transport properties and good RF response can be ascribed the to polarization-induced 2D electron gas (2DEG) density
of 7× 1012 cm2 with mobility of 1000cm2/V-sec confined at the semi-polar {1-10-1} GaN/Ga2O3 interfaces.
This paper studies the feasibility of using GaN/InGaN quantum dot as the Intermediate Band Solar Cell.
Different dot sizes are compared and the result shows significant differences due to the quantum confinement
strength. The band structure and transition rate in the quantum dot are calculated. For the smaller quantum
dot, the efficiency is much higher because of the larger separation of IB band to conduction band. However, the
contribution of intermediate bands is small and the bottle neck is found as the low transition rate between IBs
and bulk state.
Al-doped ZnO can replace tin-doped indium oxide (ITO) as a good transparent conductive oxide (TCO) in LEDs and
optoelectronic applications. We investigate on nanometer scale AlZnO thin film materials epitaxied on sapphire
substrates in 350-650°C from pulsed laser deposition (PLD). Synchrotron radiation X-ray absorption fine-structure
spectroscopy on O K-edge indicates that Al-doped ZnO can not form alloy at growth temperature 350°C without Al-O
bonding feature. The Al-O transition of AZO550 is stronger than AZO650. These are correlated to Raman scattering
measurements and analyses. Al-doped ZnO grown at 350°C possesses weak/broad Raman signals indicating a poor
crystalline film. The E2 (high) mode is strong and narrow in AZO550. All these experimental results indicate that PLD
grown AlZnO film on sapphire could get a better crystalline quality at 550°C than 350°C and 650°C.
In this paper, we have analyzed and discussed the current spreading effect of the vertical LED depending
on different electrode patterns. A fully 2D model by solving drift-diffusion and Poisson equations is used to
investigate the current flow paths and radiative recombination region. The conventional vertical LED with and
without the transparent conducting layer has been considered to figure out the physical mechanism of the device.
With the examination of the separated electrode patterns, we find that the hole current spreading length is the
critical factor to influence the lighting region due to its relatively low mobility. The effect of the spacing and
geometry of the electrode pattern has been studied in this paper. We will present our work on modeling the
different geometric LED device and study the optimized condition for these chips.
In a LED, electrons and holes are injected from the contacts into the quantum wells. The carriers diffuse laterally
in the quantum wells. In this letter, we focus on the role of interface roughness, electron-electron scattering,
and dislocation scattering in the quantum well on lateral transport and present results on the diffusion length
in the lateral direction. The influence of quantum well with different indium compositions, carrier densities,
dislocation densities, and interface roughness are studied. A Monte Carlo simulation program is used to study
the lateral mobility in quantum well. The effects of alloy scattering, charged dislocation scattering, interface
roughness scattering, and e-e scattering have been included in our Monte Carlo model. The results show that the
nonradiative lifetime caused by the dislocation trapping is still a dominating role for higher indium composition.
This limits the internal quantum efficiency. The large interface roughness caused by a quantum dot like structures
and In-clustering effect may help to improve the efficiency by reducing the diffusion length. However, our results
show that for the longer wavelength source, we should try to improve the overall internal quantum efficiency
first before discussing the droop effect. One is to decrease the radiative lifetime by reducing the QCSE with
nonpolar/semipolar structures. The other approach would be to reduce the dislocation density to less than
106cm-2.
A free-standing nanopillar with a diameter of 300 nm, and a height of 2 μm is successfully demonstrated by focused ion
beam milling. The measured micro-photoluminescence (μ-PL) from the embedded InGaN/GaN multiple quantum wells
shows a blue shift of 68 meV in energy with a broadened full-width at half maximum, ~200meV. Calculations based on
the valence force field method suggest that the spatial variation of the strain tensors in the nanopillar results in the
observed energy shift and spectrum broadening. Moreover, the power-dependent µ-PL measurement confirms that the
strain-relaxed emission region of the nanopillar exhibits a higher radiative recombination rate than that of the as-grown
structure, indicating great potential for realizing high-efficiency nano devices in the UV/blue wavelength range.
We have made a GaN-based single nanopillar with a diameter of 300nm using the focused ion beam (FIB)
technique. The micro-photoluminescence (μ-PL) from the embedded GaN/InGaN multi-quantum wells reveals
a blue shift of 68.3 meV in energy. In order to explain the spectrum shift, we have developed a valence force
field model to study the strain relaxation mechanism in a single
GaN-based nanopillar structure. The strain
distribution and strain induced polarization effect inside the multiple quantum wells is added to our self-consistent
Poisson, drift-diffusion, and Schrodinger solver to study the spectrum shift of μ-PL.
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