Shrinking of pattern size on photomask requires tight control on defects and CD qualities. Recent ultra resolution lithography requires tight criteria for defect. In this paper, we describe the main defect factor "re-adsorption of resist" on. This is dependent on the development process, the relationship between defect and development and/or rinse method. The hp90-65nm process needs to reduce re-adsorption of resist for improvement in defect level. The solution of this issue is the uniformed high flow for development and rinse fluid. We adopt modified development system as the intermediary to make high fluid flow possible. From our results, this system could reduce the number of defects around 70-80%. The defect size will also be reduced through this system. So, we propose that Noble development method is one of the effective process means for hp90-65nm photomask production.
For today’s advanced reticle production, process bias should be reduced as possible, and be “zero” ideally, because of its negative impacts on CD control and pattern fidelity against minute features. In this paper, blanks with Cr film thinner than 100 nm were examined as promising materials to meet this demand. Results from two aspects, reticle production and lithographic performance, are presented. Dry etching properties such as etching bias, CD Linearity, impact on pattern-pitch were investigated. Thin Cr film blanks showed excellent results in process bias less than 50 % of conventional ones with proper etching conditions. They also showed about 50 %’s decrease of etching bias variations for pattern-pitch with smaller CD error in CD Linearity at the same time. Results of aerial image simulations showed possibilities of them as substitute of conventional binary blanks in ArF lithography. There was no impact of Cr film thinning on depth of focus and optical proximity effect with optimized exposure condition. These experimental results imply that Cr film thickness plays an important role to decide the qualities of reticle CD. Thinner Cr film blanks have capability to realize a 90 nm-node reticle with minimized process bias enough to produce fine OPC features.
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