Negative Tone Development (NTD) process with ArF immersion has been developed for the next generation
lithography technology because it shows good resolution performance and process window for C/H and trench patterning.
Because of the etch requirement, tri-layer process has been used popularly. However, most of the Si-HM materials are
optimized for positive tone development process and most of them show poor lithography performance in NTD process.
In this paper, we study the behaviors of Si-HM for NTD process, develop new concepts and optimize the formulation of
Si-HM to match the resist for NTD process bellow N28 node device.
In the advanced semiconductor lithography process, the tri-layer process have been used for the essential
technique{photoresist/ silicon contained hard mask (Si-HM) / spin on carbon hard mask (SOC)}(Figure 1). Tri-layer
process was introduced and applied to the L/S and C/H patterning in the ArF dry and ArF immersion lithography process.
Therefore, Si-HM should have the wider compatibility with different photoresist. In this paper, we investigate the
interface behavior between photoresist and Si-HM in detail and get the new Si-HM to have the wider compatibility with
different photoresist.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.