LiNbO3 films of 1-10μm thick were grown on z-cut LiTaO3 substrates using vanadium and boron based fluxes by
liquid phase epitaxy (LPE) growth. Characterization of these films using scanning electron microscopy (SEM), electron
backscattering diffraction and high-resolution X-ray diffraction (HRXRD) show that they are single-crystal and epitaxial
with the substrate. Subsequently, LiNbO3 films were etched by SF6/Ar inductively coupled plasma (ICP) in order to
fabricate straight ridge waveguides. Effects of parameters including working pressure, RIE power and ICP power are
investigated and analyzed by measurement of etching depth, selectivity, etched surface state and sidewall profile by
means of focused ion beam (FIB) etching, energy dispersive X-ray (EDX) analysis, SEM and surface profilometry.
Optimized processes with high etching rates, good mask selectivity and near vertical profile have been achieved.
InGaAsP/InP rectangular ring lasers based on active vertical coupler structure are demonstrated in terms of loss-reduction.
Varied thresholds for different configuration devices with different coupling current have been
measured. The smallest threshold current of 75mA has been achieved in the device with the coupler length of
300μm and coupling current of 30mA. Such variation has also been calculated assuming different fabrication
loss. Their loss mechanisms have been investigated based on threshold analysis, which should benefit to further
optimize loss-reduced semiconductor polygon ring lasers based on active vertical coupler structure.
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