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Tianyi Lan
at Shanghai Institute of Technical Physics CAS
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Author
Publications (5)
Proceedings Article | 20 November 2014 Paper
Study of ICP-RIE etching on CdZnTe substrate
Pengxiao Xu, Hui Qiao, Ren Wang, Tianyi Lan, Shijia Liu, Nili Wang, Qin Zhou, Bin Xu, Xiujuan Liu, Yidan Lu, Li-wei Wang, Chao Chang, Kefeng Zhang, Xiangyang Li
Proceedings Volume 9300, 93000T (2014) https://doi.org/10.1117/12.2071045
KEYWORDS: Etching, Photoresist materials, Argon, Plasma, Gases, Optical microscopes, Lithography, Reactive ion etching, Mercury cadmium telluride, Infrared detectors
Proceedings Article | 20 November 2014 Paper
The effect of electrode process on properties of HgCdTe detectors
Nili Wang, Xiang-yang Liu, Tian-yi Lan, Shi-jia Liu, Shui-ping Zhao, Qing Zhou, Xiangyang Li
Proceedings Volume 9300, 93001Q (2014) https://doi.org/10.1117/12.2072462
KEYWORDS: Mercury cadmium telluride, Electrodes, Etching, Argon, Ions, Ion beams, Sensors, Mercury, Signal detection, Metals
Proceedings Article | 20 November 2014 Paper
An investigation for the HgCdTe cleaning process
Tian-Yi Lan, Nili Wang, Shuiping Zhao, Shi-Jia Liu, Xiang-Yang Li
Proceedings Volume 9300, 93001B (2014) https://doi.org/10.1117/12.2071717
KEYWORDS: Mercury cadmium telluride, Natural surfaces, Contamination, Semiconducting wafers, Surface finishing, Sensors, Particles, Carbon, Chemical mechanical planarization, Pulsed laser operation
Proceedings Article | 20 November 2014 Paper
A new pixel level digital read out integrated circuits for ultraviolet imaging sensors
Bin Xu, Tian-yi Lan, Yong-gang Yuan, Xiang-yang Li
Proceedings Volume 9300, 93000X (2014) https://doi.org/10.1117/12.2071159
KEYWORDS: Optical sensors, Digital electronics, Integrated circuits, Ultraviolet radiation, Analog electronics, Sensors, Signal processing, Transistors, Readout integrated circuits, Capacitors
Proceedings Article | 15 October 2012 Paper
The interfacial properties of AOF/ZnS and LWIR bulk HgCdTe materials by MIS structures
Nili Wang, Shijia Liu, Tianyi Lan, Shuiping Zhao, Peilu Jiang, Xiangyang Li
Proceedings Volume 8419, 84191D (2012) https://doi.org/10.1117/12.975117
KEYWORDS: Mercury cadmium telluride, Capacitance, Zinc, Sensors, Semiconductors, Interfaces, Long wavelength infrared, Dielectrics, Semiconducting wafers, Capacitors
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