Special Section on Mask Technology for Optical Lithography

Novel in-situ focus monitor technology in attenuated phase shift mask under actual illumination conditions

[+] Author Affiliations
Kyoko Izuha, Masafumi Asano, Tadahito Fujisawa, Soichi Inoue

Toshiba Corporation, Semiconductor Company, Process and Manufacturing Engineering 8 Shinsugita-cho, Isogo-ku Center, Yokohama 235-8522, Japan

J. Micro/Nanolith. MEMS MOEMS. 3(2), 284-292 (Apr 01, 2004). doi:10.1117/1.1669541
History: Received Jun. 20, 2003; Revised Oct. 9, 2003; Revised Dec. 29, 2003; Accepted Jan. 12, 2004; Online March 31, 2004
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Focus monitor technology for attenuated phase shift masks under annular illumination has been developed for a in-line quality control. The focus monitor pattern on a reticle employs a pair of grouped lozenge-shaped opening patterns in the attenuated phase shifting region. Since the phase shifting angles of light passing through the first and second opening patterns are 90° and 0°, respectively, the best focus position for the first pattern shifts to that of the second pattern. Subtraction of the length of the patterns is a linear function of the actual focal position printed on the wafer. The linear function is insensitive to further mask phase error. Therefore, the effective focal position can be extracted by measuring that subtracted from the measured length. High resolution of 10 nm defocus was achieved using this technique. © 2004 Society of Photo-Optical Instrumentation Engineers.

© 2004 Society of Photo-Optical Instrumentation Engineers

Citation

Kyoko Izuha ; Masafumi Asano ; Tadahito Fujisawa and Soichi Inoue
"Novel in-situ focus monitor technology in attenuated phase shift mask under actual illumination conditions", J. Micro/Nanolith. MEMS MOEMS. 3(2), 284-292 (Apr 01, 2004). ; http://dx.doi.org/10.1117/1.1669541


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