Articles

Double-sided micromachining process for silicon cantilever using a parallel capacitively coupled plasma

[+] Author Affiliations
Wei-Chih Wang, Joe Nhut Ho, Per G. Reinhall

University of Washington, Department of Mechanical Engineering, Seattle, Washington 98195-2600 E-mail: abong@u.washington.edu

J. Micro/Nanolith. MEMS MOEMS. 4(1), 013010 (Feb. 1, 2005). doi:10.1117/1.1856928
History: Received Feb. 6, 2003; Revised Jul. 2, 2004; Accepted Jul. 21, 2004; Feb. 1, 2005; Online February 01, 2005
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A double-sided micromachining process for silicon-based device fabrication is developed that allows the use of capacitively coupled reactive ion etching (RIE) equipment for high-aspect-ratio etching. The effects of the masking materials and RIE conditions are discussed. Based on the experimental results, a 1000-Å-thick Al film sufficiently protects the unexposed substrate while allowing the etching of a 350-μm-deep hole with an area of 3×3 mm2 when etching with SF6/CHF3/O2 plasma. A 2000-μm-long and 100-μm-wide (with layers of Al/SiO2/Si and thickness of 0.1/2.2/40 μm, respectively) cantilever beam is achieved. A silicon etch rate up to 2.5 to 2.8 μm/min is obtained and an anisotropy of A=0.5(A=1V/H, where V is the horizontal undercut and H is the etch depth) is obtained. The technique is developed mainly for bulk micromachining of silicon or composite silicon cantilever structures. © 2005 Society of Photo-Optical Instrumentation Engineers.

© 2005 Society of Photo-Optical Instrumentation Engineers

Citation

Wei-Chih Wang ; Joe Nhut Ho and Per G. Reinhall
"Double-sided micromachining process for silicon cantilever using a parallel capacitively coupled plasma", J. Micro/Nanolith. MEMS MOEMS. 4(1), 013010 (Feb. 1, 2005). ; http://dx.doi.org/10.1117/1.1856928


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