Articles

Contact hole formation by multiple exposure technique in ultralow k1 lithography

[+] Author Affiliations
Hiroko Nakamura, Yasunobu Onishi, Kazuya Sato, Satoshi Tanaka, Shoji Mimotogi, Koji Hashimoto, Soichi Inoue

Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan E-mail: h-nakamura@amc.toshiba.co.jp

J. Micro/Nanolith. MEMS MOEMS. 4(2), 023005 (May 13, 2005). doi:10.1117/1.1899324
History: Received Jun. 23, 2004; Revised Oct. 14, 2004; Accepted Oct. 18, 2004; May 13, 2005; Online May 13, 2005
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The double line and space (L&S) formation method with L&S masks and dipole illumination was found to have high capability to fabricate ∼0.3 k1 contact hole (C/H) pattern. The procedure was as follows. The first L&S pattern was formed and was hardened to avoid the dissolution and mixing during the second resist coating. The second L&S pattern perpendicular to the first one was formed on the first resist pattern. The common space area of the two patterns became 1:1 C/H pattern. Simulation results showed that the double L&S formation method has much wider lithography latitude than other methods, such as single exposure of a C/H mask with quadrupole illumination, single exposure of a vortex mask with conventional illumination, and double exposure of L&S masks with dipole illumination to a single-layer resist. A 75 nm (0.30 k1) 1:1 C/H pattern was fabricated. An 80 nm (0.32 k1) 1:1 C/H pattern had 280 and 600 nm depth of focus in each resist layer at 8% exposure latitude. Moreover, a new method, in which a C/H mask replaces the L&S masks, is proposed to achieve cost reduction and the same high performance as the L&S masks. © 2005 Society of Photo-Optical Instrumentation Engineers.

© 2005 Society of Photo-Optical Instrumentation Engineers

Citation

Hiroko Nakamura ; Yasunobu Onishi ; Kazuya Sato ; Satoshi Tanaka ; Shoji Mimotogi, et al.
"Contact hole formation by multiple exposure technique in ultralow k1 lithography", J. Micro/Nanolith. MEMS MOEMS. 4(2), 023005 (May 13, 2005). ; http://dx.doi.org/10.1117/1.1899324


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