COMMUNICATIONS

New resists for nanometer scale patterning by extreme ultraviolet lithography

[+] Author Affiliations
Kenneth E. Gonsalves

Polymer Chemistry Nanotechnology Laboratory, Cameron Applied Research Center and Department of Chemistry

Center for Optoelectronics and Optical Communications, University of North Carolina, Charlotte, North Carolina 28223 E-mail: kegonsal@email.uncc.edu

Muthiah Thiyagarajan

Polymer Chemistry Nanotechnology Laboratory, Cameron Applied Research Center and Department of Chemistry, University of North Carolina, Charlotte, North Carolina 28223

Kim Dean

International SEMATECH, Austin, Texas 78741

J. Micro/Nanolith. MEMS MOEMS. 4(2), 029701 (May 24, 2005). doi:10.1117/1.1898604
History: Received Jul. 9, 2004; Revised Jan. 5, 2005; Accepted Jan. 8, 2005; May 24, 2005; Online May 24, 2005
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The goal of nanofabrication capabilities that can routinely achieve dimensions of less than 32 nm will require the design of new photopolymers and strategies using wavelengths as short as 13 nm [extreme ultraviolet (EUV)]. Although EUV lithography is a challenging emerging technology that has proven its feasibility to smaller image features, yet it still requires novel photoresists. This communication discusses developments in the synthesis and lithographic performance of positive chemically amplified photoresists incorporating hydroxystyrene and a bulky adamantly protecting group. The incorporation of an ionic PAG unit, phenyl methacrylate dimethysulfonium triflate (PAG), in the resist backbone showed increased sensitivity compared with the analogous blend PAG resist samples. Sub-50 nm patterns were obtained upon extreme UV exposure on ultrathin single layer resist films of the newly synthesized polymer bound PAG resist, poly (4-hydroxystyrene-co-2-ethyl-2-adamantyl methacrylate-co-PAG). © 2005 Society of Photo-Optical Instrumentation Engineers.

© 2005 Society of Photo-Optical Instrumentation Engineers

Citation

Kenneth E. Gonsalves ; Muthiah Thiyagarajan and Kim Dean
"New resists for nanometer scale patterning by extreme ultraviolet lithography", J. Micro/Nanolith. MEMS MOEMS. 4(2), 029701 (May 24, 2005). ; http://dx.doi.org/10.1117/1.1898604


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