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Dielectric-thickness dependence of damage induced by electron-beam irradiation on metal nitride oxide semiconductor gate pattern

[+] Author Affiliations
Miyako Matsui, Toshiyuki Mine, Kazuyuki Hozawa, Kikuo Watanabe

Hitachi, Ltd., Central Research Laboratory, 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan

Jiro Inoue, Hiroshi Nagaishi

Renesas Technology Corp., 751 Horiguchi, Hitachinaka, Ibaraki 312-0034, Japan

J. Micro/Nanolith. MEMS MOEMS. 7(3), 033003 (July 24, 2008). doi:10.1117/1.2959176
History: Received July 03, 2007; Revised February 19, 2007; Accepted March 06, 2008; Published July 24, 2008
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We analyzed the electron-irradiation damage induced by electron-beam inspection of metal nitride oxide semiconductor (MNOS) capacitors with various gate-dielectric thicknesses. Damage induced in an MNOS capacitor with a SiON dielectric for high-performance CMOS devices was compared to that induced on a metal oxide semiconductor (MOS) capacitor. We found that there is no remarkable difference between the damage to MOS capacitors and that to metal nitride oxide semiconductor MNOS capacitors. Damage was induced when a high-energy electron beam, whose electron range was larger than the thickness of the gate electrode, was irradiated. The induced damage strongly depends on the thickness of the gate dielectric. When the beam was irradiated onto a capacitor with a gate-dielectric thickness of 10.0nm the flatband voltage shifted. When the beam was scanned onto a capacitor with a gate-dielectric thickness of 4.0nm, the flatband voltage shifted minimally. However, the leakage-current density increased to 107Acm2 at a gate voltage of 3.0V. On the other hand, when the beam was scanned onto an MNOS capacitor with 2.5-nm-thick dielectric, not even the leakage current was increased. Accordingly, for damage-free inspection when a gate-dielectric thickness is 4.0nm or more, the beam energy needs to be lower so that the electron range is shorter than the thickness of the gate electrode.

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© 2008 Society of Photo-Optical Instrumentation Engineers

Citation

Miyako Matsui ; Toshiyuki Mine ; Kazuyuki Hozawa ; Kikuo Watanabe ; Jiro Inoue, et al.
"Dielectric-thickness dependence of damage induced by electron-beam irradiation on metal nitride oxide semiconductor gate pattern", J. Micro/Nanolith. MEMS MOEMS. 7(3), 033003 (July 24, 2008). ; http://dx.doi.org/10.1117/1.2959176


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