Articles

Free-standing C60 nanowire fabricated using XeF2 sacrificial dry etching

[+] Author Affiliations
Toshiyuki Tsuchiya

Kyoto University, Department of Microengineering, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan

Yasutake Ura

Kyoto University, Department of Microengineering, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan

Tomoya Jomori

Kyoto University, Department of Microengineering, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan

Koji Sugano

Kyoto University, Department of Microengineering, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan

Osamu Tabata

Kyoto University, Department of Microengineering, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan

J. Micro/Nanolith. MEMS MOEMS. 8(1), 013020 (March 06, 2009). doi:10.1117/1.3094745
History: Received July 20, 2008; Revised January 08, 2009; Accepted January 14, 2009; Published March 06, 2009
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We report a fabrication of doubly supported free-standing buckminsterfullerene (C60) nanowires onto single crystal silicon microstructures in order to demonstrate an integration of carbon nanomaterials to surface-micromachined microelectromechanical devices. By irradiating vacuum-deposited C60 film with an electron beam, polymerized C60 nanowires were patterned. Free-standing structures of the C60 nanowires were obtained by sacrificial etching of underlying silicon structures using XeF2 gas. The supporting 5-μm thick silicon structure was released using vapor hydrofluoric acid. The C60 nanowire of 2-μm width, 25-μm length, and 40-nm thickness connected to a movable single crystal silicon structure was successfully fabricated.

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© 2009 Society of Photo-Optical Instrumentation Engineers

Citation

Toshiyuki Tsuchiya ; Yasutake Ura ; Tomoya Jomori ; Koji Sugano and Osamu Tabata
"Free-standing C60 nanowire fabricated using XeF2 sacrificial dry etching", J. Micro/Nanolith. MEMS MOEMS. 8(1), 013020 (March 06, 2009). ; http://dx.doi.org/10.1117/1.3094745


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