Double-patterning generation at node and beyond raises many subjects for photomask blanks. We especially focus on the resolution improvement by hyper-thin resist combined with the hardmask process called the hyper-thin resist system (HTRS). Cr-hardmask has been specially developed for the HTRS, and this Cr material shows an extremely high etching rate. Additionally, we confirmed that a resist thickness was available to etch the Cr-hardmask and last then the resolution of MoSi-absorber patterns was improved by HTRS, such as LS, isolated line and hole, and isolated space. Moreover, the Cr-hardmask showed almost no film stress, which is necessary to achieve the image placement accuracy required for the double patterning. MoSi-binary with HTRS meets the photomask technology requirements for node and beyond.