Articles

Hyper-thin resist system for photomask-making in double-patterning generation

[+] Author Affiliations
Masahiro Hashimoto

HOYA Corporation, Blanks Division, 3280 Nakamaru, Nagasaka, Hokuto, Yamanashi, Japan 408-8550

Hideaki Mitsui

HOYA Corporation, Blanks Division, 3280 Nakamaru, Nagasaka, Hokuto, Yamanashi, Japan 408-8550

J. Micro/Nanolith. MEMS MOEMS. 8(2), 023001 (April 14, 2009). doi:10.1117/1.3116127
History: Received October 28, 2008; Revised February 05, 2009; Accepted February 23, 2009; Published April 14, 2009
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Double-patterning generation at 32-nm node and beyond raises many subjects for photomask blanks. We especially focus on the resolution improvement by hyper-thin resist combined with the hardmask process called the hyper-thin resist system (HTRS). Cr-hardmask has been specially developed for the HTRS, and this Cr material shows an extremely high etching rate. Additionally, we confirmed that a 55-nm resist thickness was available to etch the Cr-hardmask and last then the resolution of MoSi-absorber patterns was improved by HTRS, such as 45-nm LS, 60-nm isolated line and hole, and 35-nm isolated space. Moreover, the Cr-hardmask showed almost no film stress, which is necessary to achieve the image placement accuracy required for the double patterning. MoSi-binary with HTRS meets the photomask technology requirements for 32-nm node and beyond.

© 2009 Society of Photo-Optical Instrumentation Engineers

Citation

Masahiro Hashimoto and Hideaki Mitsui
"Hyper-thin resist system for photomask-making in double-patterning generation", J. Micro/Nanolith. MEMS MOEMS. 8(2), 023001 (April 14, 2009). ; http://dx.doi.org/10.1117/1.3116127


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