Articles

Calibration of physical resist models: methods, usability, and predictive power

[+] Author Affiliations
Ulrich Klostermann

Synopsys GmbH, Karl-Hammerschmidt-Strasse 34, D-85609 Aschheim/Dornach, Germany

Thomas Mülders, Thomas Schmöller

Synopsys GmbH, Karl-Hammerschmidt-Strasse 34, D-85609 Aschheim/Dornach, Germany

Denis Ponomarenco

Synopsys GmbH, Karl-Hammerschmidt-Strasse 34, D-85609 Aschheim/Dornach, Germany

Jeroen Van de Kerkhove

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

Peter De Bisschop

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

J. Micro/Nanolith. MEMS MOEMS. 8(3), 033005 (September 18, 2009). doi:10.1117/1.3224949
History: Received March 05, 2009; Revised June 14, 2009; Accepted July 27, 2009; Published September 18, 2009
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We discuss the methodology of physical resist model calibration for a rigorous lithography simulator under various aspects and assess the resulting predictive accuracy. The study is performed on an extensive optical proximity correction (OPC) dataset, which includes several thousands of critical dimensions (CDs) values obtained with immersion lithography for the 45-nm half-pitch technology node. We address practical aspects such as speed of calibration versus size of calibration dataset, and the role of pattern selection for calibration. In particular, we show that a small subset of the dataset is sufficient to provide accurate calibration results. However, the overall predictive power can strongly be enhanced if a few critical patterns are additionally included into the calibration dataset. Also, we demonstrate a significant impact of the illumination source shape (measured versus nominal top hat) on the resulting model quality. Most importantly, it is shown that calibrated resist models based on a 3-D (topographic) mask description perform better than resist models based on a 2-D (Kirchhoff) mask approximation. Also, we show that a resist model calibrated with one-dimensional (lines and spaces) structures only can successfully predict the printing behavior of two-dimensional patterns (end-of-line structures).

Figures in this Article
© 2009 Society of Photo-Optical Instrumentation Engineers

Topics

Calibration

Citation

Ulrich Klostermann ; Thomas Mülders ; Denis Ponomarenco ; Thomas Schmöller ; Jeroen Van de Kerkhove, et al.
"Calibration of physical resist models: methods, usability, and predictive power", J. Micro/Nanolith. MEMS MOEMS. 8(3), 033005 (September 18, 2009). ; http://dx.doi.org/10.1117/1.3224949


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