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Fully differential CMOS-MEMS z-axis accelerometer with torsional structures and planar comb fingers

[+] Author Affiliations
Mohd Haris

Oakland University, Department of Electrical and Computer Engineering, 2200 North Squirrel Road, Rochester, Michigan 48309

Hongwei Qu

Oakland University, Department of Electrical and Computer Engineering, 2200 North Squirrel Road, Rochester, Michigan 48309

J. Micro/Nanolith. MEMS MOEMS. 9(1), 013031 (March 01, 2010). doi:10.1117/1.3295714
History: Received October 26, 2009; Revised November 30, 2009; Accepted December 03, 2009; Published March 01, 2010; Online March 01, 2010
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Fully differential z-axis acceleration sensing often requires complicated multiwafer bonding processes. We present an integrated fully differential complementary metal-oxide semiconductor–micro-electromechanical systems (CMOS-MEMS) z-axis accelerometer utilizing planar comb fingers and a pair of single-crystal silicon (SCS) torsional springs. The sidewall capacitors formed by multiple CMOS interconnect metal layers are exploited for fully differential displacement sensing with a common-centroid wiring configuration. Single crystal silicon is used throughout the device to form robust microstructures. A deep reactive ion etching (DRIE)–based microfabrication process with large processing tolerance has been developed to allow monolithic integration of CMOS circuitry with sensor structures and high fabrication yield. With an on-chip low-power, low-noise, dual-chopper amplifier that has a measured 44.5-dB gain and 1-mW power consumption, the fabricated integrated z-axis accelerometer demonstrates a sensitivity of 250mVg and an overall noise floor of 110μgHz.

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© 2010 Society of Photo-Optical Instrumentation Engineers

Citation

Mohd Haris and Hongwei Qu
"Fully differential CMOS-MEMS z-axis accelerometer with torsional structures and planar comb fingers", J. Micro/Nanolith. MEMS MOEMS. 9(1), 013031 (March 01, 2010). ; http://dx.doi.org/10.1117/1.3295714


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