Quantitative measurement of voltage contrast in scanning electron microscope images for in-line resistance inspection of wafers

Miyako Matsui; Takayuki Odaka; Hiroshi Nagaishi; Koichi Sakurai

doi:10.1117/1.3514702

1 October 2010 Quantitative measurement of voltage contrast in scanning electron microscope images for in-line resistance inspection of wafers

Miyako Matsui, Takayuki Odaka, Hiroshi Nagaishi, Koichi Sakurai

Author Affiliations +

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 9, Issue 4, 041304 (October 2010). https://doi.org/10.1117/1.3514702

Abstract

We develope an in-line inspection method for partial-electrical measurement of defect resistance, which is quantitatively estimated from the voltage contrast formed in a scanning electron microscopy (SEM) image of an incomplete-contact defect. We first manufacture standard calibration wafers for the voltage-contrast calibration. The contact resistance of systematically formed defects varied from 10⁸ to 10¹⁷ . Then, we quantitatively analyze the gray scales of these defect images captured using a review SEM. As a result, calibration curves for estimating the contact resistance of the incomplete-contact defect are obtained at a probe current of 60 pA and a charging voltage of 4 V. The estimated contact resistance is between 10⁷ and 10¹² . Finally, this inspection method is applied to wafers manufactured for a static random access memory device. Accordingly, the gray scales of defective plugs formed for shared contact patterns are classified into two levels. The resistances of these defects are estimated from the calibration curve. The estimated resistances of the lower contrast defects (with an accuracy of about one order of magnitude) agree well with the resistances measured using a nanoprober. The resistances of the higher contrast defects are estimated as well, although they are too high to be measured using a nanoprober.

©(2010) Society of Photo-Optical Instrumentation Engineers (SPIE)

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Miyako Matsui, Takayuki Odaka, Hiroshi Nagaishi, and Koichi Sakurai "Quantitative measurement of voltage contrast in scanning electron microscope images for in-line resistance inspection of wafers," Journal of Micro/Nanolithography, MEMS, and MOEMS 9(4), 041304 (1 October 2010). https://doi.org/10.1117/1.3514702

Published: 1 October 2010

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KEYWORDS

Resistance

Semiconducting wafers

Scanning electron microscopy

Calibration

Inspection

Silicon

Manufacturing

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