Special Section on Metrology

Simultaneous measurement of optical properties and geometry of resist using multiple scatterometry targets

[+] Author Affiliations
Alok Vaid

GLOBALFOUNDRIES, Inc., 2070 Route 52, Hopewell Junction, New York 12533

Matthew Sendelbach

IBM Corporation, 2070 Route 52, Hopewell Junction, New York 12533

Daniel Moore

IBM Corporation, 2070 Route 52, Hopewell Junction, New York 12533

Timothy A. Brunner

IBM Corporation, 2070 Route 52, Hopewell Junction, New York 12533

Nelson Felix

IBM Corporation, 2070 Route 52, Hopewell Junction, New York 12533

Pawan Rawat

IBM Corporation, 2070 Route 52, Hopewell Junction, New York 12533

Cornel Bozdog

Nova Measuring Instruments, Inc., 4701 Patrick Henry Drive, Suite 1701, Santa Clara, California 95054

Hyang Kyun Helen Kim

Nova Measuring Instruments, Inc., 4701 Patrick Henry Drive, Suite 1701, Santa Clara, California 95054

Michael Sendler

Nova Measuring Instruments, Inc., 4701 Patrick Henry Drive, Suite 1701, Santa Clara, California 95054

Stanislav Stepanov

Nova Measuring Instruments, Ltd., P. O. Box 266, Weizmann Science Park, Rehovot 76100, Israel

Victor Kucerov

Nova Measuring Instruments, Ltd., P. O. Box 266, Weizmann Science Park, Rehovot 76100, Israel

J. Micro/Nanolith. MEMS MOEMS. 9(4), 041306 (December 09, 2010). doi:10.1117/1.3514707
History: Received March 30, 2010; Revised September 20, 2010; Accepted September 28, 2010; Published December 09, 2010; Online December 09, 2010
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Optical properties (n and k) of the material films under measurement are commonly assumed invariant and fixed in scatterometry modeling. This assumption keeps the modeling simple by limiting the number of floating parameters in the model. Such scatterometry measurement has the potential to measure with high precision some of the profile parameters (critical dimension, sidewall angle). The question is: if the optical properties modeled as “fixed” are actually changing, would this modeling assumption impact the accuracy of reported geometrical parameters? Using the example of a resist profile measurement, we quantify the “bias” effect of unmodeled variation of optical properties on the accuracy of the reported geometry by utilizing a traditional fixed n and k model. With a second model, we float an additional optical parameter and lower the bias of the reported values, at the expense of slightly increased “noise” of the measurement (more floating parameters, less precision). Finally, we extend our multistack approach (previously introduced as an enabler to the product-driven material characterization methodology) to augment the spectral information and increase both precision and accuracy through the simultaneous modeling of multiple targets.

© 2010 Society of Photo-Optical Instrumentation Engineers

Citation

Alok Vaid ; Matthew Sendelbach ; Daniel Moore ; Timothy A. Brunner ; Nelson Felix, et al.
"Simultaneous measurement of optical properties and geometry of resist using multiple scatterometry targets", J. Micro/Nanolith. MEMS MOEMS. 9(4), 041306 (December 09, 2010). ; http://dx.doi.org/10.1117/1.3514707


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