Special Section on Theory and Practice of MEMS, NEMS, and MOEMS

Novel multicontact radio frequency microelectromechanical system switch in high-power–handling applications

[+] Author Affiliations
Bo Liu

Peking University, Institute of Microelectronics, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Cheng Fu Road, Haidian District, Beijing 100871 China

Zhiqiu Lv

Peking University, Institute of Microelectronics, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Cheng Fu Road, Haidian District, Beijing 100871 China

Xunjun He

Peking University, Institute of Microelectronics, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Cheng Fu Road, Haidian District, Beijing 100871 China

Yilong Hao

Peking University, Institute of Microelectronics, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Cheng Fu Road, Haidian District, Beijing 100871 China

Zhihong Li

Peking University, Institute of Microelectronics, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Cheng Fu Road, Haidian District, Beijing 100871 China

J. Micro/Nanolith. MEMS MOEMS. 10(1), 011505 (March 22, 2011). doi:10.1117/1.3564864
History: Received July 30, 2010; Revised February 14, 2011; Accepted February 21, 2011; Published March 22, 2011; Online March 22, 2011
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We report a novel multicontact radio frequency (RF) microelectromechanical system (MEMS) switch with mechanical independent switch elements and microspring contacts. The consistent contact arrangement and the robust contact design can effectively increase the contact area, reduce the current density, and therefore improve the power-/current-handling capability. The working mechanism of the switch with microspring contact is investigated by CoventorWare® simulation tools. The switch, fabricated by the Cu–Ni dual-metallic-sacrificial-layer surface micromachining, is actuated at 55 V for characterization. The closing time is 11 μs, and the opening time is 13.5 μs. The isolation is –30.9 dB at 2 GHz and –11.5 dB at 20 GHz; the insertion loss is –0.12 dB at 2 GHz and –0.22 dB at 20 GHz. The contact metal is Pt–Au, and the measured switch resistance drops from 48 to 1.2 Ω when the actuation voltage increases from 40 to 65 V. The switch element handles a current of 300 mA at 0.1 Hz. The switch is an excellent candidate for microwave applications requiring high-power handling.

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© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation

Bo Liu ; Zhiqiu Lv ; Xunjun He ; Yilong Hao and Zhihong Li
"Novel multicontact radio frequency microelectromechanical system switch in high-power–handling applications", J. Micro/Nanolith. MEMS MOEMS. 10(1), 011505 (March 22, 2011). ; http://dx.doi.org/10.1117/1.3564864


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