Articles

Effective exposure dose monitoring technique in extreme ultraviolet lithography

[+] Author Affiliations
Yumi Nakajima

Toshiba Corporation, Device Process Development Center, Corporate Research & Development Center, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

Kentaro Kasa

Toshiba Corporation, Device Process Development Center, Corporate Research & Development Center, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

Takashi Sato

Toshiba Corporation, Device Process Development Center, Corporate Research & Development Center, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

Masafumi Aasano

Toshiba Corporation, Device Process Development Center, Corporate Research & Development Center, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

Suigen Kyoh

Toshiba Corporation, Device Process Development Center, Corporate Research & Development Center, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

Hiroyuki Mizuno

Toshiba America Electronic Components, 257 Fuller Road, Albany, New York 12203

J. Micro/Nanolith. MEMS MOEMS. 10(1), 013005 (January 28, 2011). doi:10.1117/1.3533231
History: Received July 15, 2010; Revised November 20, 2010; Accepted December 02, 2010; Published January 28, 2011; Online January 28, 2011
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Extreme ultraviolet (EUV) lithography is a promising candidate for 2x-nm-node device manufacturing. Management of effective dose is important to meet the stringent requirements for critical dimension control. As a test pattern for a lithography tool evaluation, the effective dose monitor (EDM) demonstrates sound performance in dose monitoring for optical lithography, such as KrF lithography. The EDM can measure an exposure dose with no influence on defocus, because the image of an EDM pattern is produced by the zeroth-order ray in diffraction only. When this technique is applied to EUV lithography, the mask shadowing effect should be taken into consideration. We calculated the shadowing effect as a function of field position and applied it to correction of the experimental dose variation. We estimated the dose variation in EUV exposure field to be 2.55% when corrected by the shadowing effect. We showed that the EDM is useful for EUV lithography.

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© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation

Yumi Nakajima ; Kentaro Kasa ; Takashi Sato ; Masafumi Aasano ; Suigen Kyoh, et al.
"Effective exposure dose monitoring technique in extreme ultraviolet lithography", J. Micro/Nanolith. MEMS MOEMS. 10(1), 013005 (January 28, 2011). ; http://dx.doi.org/10.1117/1.3533231


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