Articles

New approaches for scatterometry-based metrology for critical distance and overlay measurement and process control

[+] Author Affiliations
Kaustuve Bhattacharyya

ASML, De Run 6501, 5504-DR Veldhoven, The Netherlands

Noelle Wright, Maurits van der Schaar, Arie den Boef, Paul Hinnen, Mir Shahrjerdy, Vivien Wang, Spencer Lin, Cathy Wang

ASML, De Run 6501, 5504-DR Veldhoven, The Netherlands

Chih-Ming Ke

Taiwan Semiconductor Manufacturing Company, Ltd., Research and Development Department, 8 Li-Hsin Rd. Hsinchu Sc Park, Hsinchu, 300-77 Taiwan

Jacky Huang, Willie Wang

Taiwan Semiconductor Manufacturing Company, Ltd., Research and Development Department, 8 Li-Hsin Rd. Hsinchu Sc Park, Hsinchu, 300-77 Taiwan

J. Micro/Nanolith. MEMS MOEMS. 10(1), 013013 (January 25, 2011). doi:10.1117/1.3532076
History: Received April 18, 2010; Revised September 18, 2010; Accepted November 29, 2010; Published January 25, 2011; Online January 25, 2011
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Communication between lithography and metrology is becoming increasingly demanding in advanced nodes. This is where the requirements for metrology become extremely tight. This work is dedicated to the search for “clean” metrology that is required to address these requirements. Metrology measurements are obtained via an angle-resolved scatterometry-based platform (called YieldStar). Details of the technology behind YieldStar were thoroughly discussed by Vanoppen et al. in 2010. In this current work, measurement limits are challenged to test resolution and measurement uncertainty for overlay, critical dimension (CD), and sidewall angle (focus). Results indicate an atomic-scale performance of deep subnanometers. Two different sizes of scatterometry-based overlay targets are evaluated and compared using a technique called the similarity index. A CD reconstruction model is tested for cross talk of underlying thin-film layers, specifically the case where one of the underlying layers is anisotropic. A systematic approach is taken to increase the complexity of a CD reconstruction model in steps to evaluate the capability of handling birefringence effects of anisotropic material in the model. CD metrology data (1-D and 2-D/hole layers) are compared to CD scanning electron microscope data. Focus measurements are also extended for product wafers, and focus precision is evaluated. In addition, CD metrology monitor wafer applications, such as hotplate monitoring and overlay metrology monitor wafer application for scanner stability and matched machine overlay, are tested.

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© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation

Kaustuve Bhattacharyya ; Noelle Wright ; Maurits van der Schaar ; Arie den Boef ; Paul Hinnen, et al.
"New approaches for scatterometry-based metrology for critical distance and overlay measurement and process control", J. Micro/Nanolith. MEMS MOEMS. 10(1), 013013 (January 25, 2011). ; http://dx.doi.org/10.1117/1.3532076


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