Special Section on Advanced Plasma-Etch Technology

Key contributors for improvement of line width roughness, line edge roughness, and critical dimension uniformity: 15 nm half-pitch patterning with extreme ultraviolet and self-aligned double patterning

[+] Author Affiliations
Kaidong Xu, Laurent Souriau, Janko Versluijs, Patrick Wong, Diziana Vangoidsenhoven, Nadia Vandenbroeck, Harold Dekkers, Xiaoping Shi, Johan Albert, Chi Lim Tan, Vincent Wiaux, Werner Boullart

IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium

David Hellin, Johan Vertommen, Bart Coenegrachts

Lam Research Corp., Kapeldreef 75, 3001, Leuven, Belgium

Isabelle Orain, Yoshie Kimura

Lam Research Corp., 4400 Cushing Parkway, Fremont, California 94538

J. Micro/Nanolith. MEMS MOEMS. 12(4), 041302 (Sep 04, 2013). doi:10.1117/1.JMM.12.4.041302
History: Received March 19, 2013; Revised June 18, 2013; Accepted July 9, 2013
Text Size: A A A

Abstract.  The approach for patterning 15-nm half-pitch (HP) structures using extreme ultraviolet lithography combined with self-aligned double patterning is discussed. A stack composed of a double hard mask, which allows decoupling photoresist transfer and trim, and an α-Si mandrel, which offers better mechanical properties during the mandrel and spacer patterning, is proposed. A break-down study with the patterning steps was performed to investigate the key contributors for improvement of linewidth roughness (LWR), line-edge roughness (LER), and critical dimension uniformity (CDU), targeting integrated solutions with lithography, etch, thin film deposition, and wet cleans for selected applications. Based on the optimization of these key patterning contributors, optimum LWR, LER, and CDU at 15 nm HP are demonstrated.

Figures in this Article
© 2013 Society of Photo-Optical Instrumentation Engineers

Citation

Kaidong Xu ; Laurent Souriau ; David Hellin ; Janko Versluijs ; Patrick Wong, et al.
"Key contributors for improvement of line width roughness, line edge roughness, and critical dimension uniformity: 15 nm half-pitch patterning with extreme ultraviolet and self-aligned double patterning", J. Micro/Nanolith. MEMS MOEMS. 12(4), 041302 (Sep 04, 2013). ; http://dx.doi.org/10.1117/1.JMM.12.4.041302


Tables

Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.