Lithography

Creation of guiding patterns for directed self-assembly of block copolymers by resistless direct e-beam exposure

[+] Author Affiliations
Laura Evangelio

Institut de Microelectrònica de Barcelona, Campus de la Universitat Autònoma de Barcelona, Bellaterra 08193, Spain

Institut Català de Nanotecnologia, Campus de la Universitat Autònoma de Barcelona, Bellaterra 08193, Spain

Marta Fernández-Regúlez, Matteo Lorenzoni, Francesc Pérez-Murano

Institut de Microelectrònica de Barcelona, Campus de la Universitat Autònoma de Barcelona, Bellaterra 08193, Spain

Xavier Borrisé, Jordi Fraxedas

Institut Català de Nanotecnologia, Campus de la Universitat Autònoma de Barcelona, Bellaterra 08193, Spain

J. Micro/Nanolith. MEMS MOEMS. 14(3), 033511 (Sep 21, 2015). doi:10.1117/1.JMM.14.3.033511
History: Received March 25, 2015; Accepted August 10, 2015
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Abstract.  We present an approach for the creation of guiding patterns to direct the self-assembly of block copolymers. A neutral layer of a brush polymer is directly exposed by electrons, causing the cross-linking of the brush molecules, and thus changing its local affinity. The advantage relies on the achievable resolution and the reduction of the process steps in comparison with deep UV and conventional electron beam lithography, since it avoids the use of a resist. We envision that this method will be highly valuable for the investigation of high-chi directed self-assembly materials and complex guiding pattern designs, where pattern placement and resolution are becoming critical.

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© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

Laura Evangelio ; Marta Fernández-Regúlez ; Xavier Borrisé ; Matteo Lorenzoni ; Jordi Fraxedas, et al.
"Creation of guiding patterns for directed self-assembly of block copolymers by resistless direct e-beam exposure", J. Micro/Nanolith. MEMS MOEMS. 14(3), 033511 (Sep 21, 2015). ; http://dx.doi.org/10.1117/1.JMM.14.3.033511


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