9 June 2016 Thick-film MEMS thermoelectric sensor fabricated using a thermally assisted lift-off process
Yuan Jia, Haogang Cai, Qiao Lin
Author Affiliations +
Abstract
This paper presents a thick-film microelectromechanical systems thermoelectric sensor fabricated by a low-temperature thermally assisted lift-off process. During the process, thick metal or semiconductor films experience controlled breakup due to thermal reflow of the underlying lithographically defined photoresist patterns, thereby facilitating the sacrificial removal of the photoresist. This enables rapid and reliable patterning of thick films that can otherwise be difficult to achieve by conventional processes. Experimental results with a sensor consisting of a 60-junction thick-film antimony–bismuth thermopile demonstrate an electric conductivity of 5.44×106  S/m and a Seebeck coefficient of 114  μV/K per junction, which are comparable to those obtained from bulk materials. Thus, the thick-film sensor can potentially allow low-noise, high-efficiency thermoelectric measurements.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE) 1932-5150/2016/$25.00 © 2016 SPIE
Yuan Jia, Haogang Cai, and Qiao Lin "Thick-film MEMS thermoelectric sensor fabricated using a thermally assisted lift-off process," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(2), 024501 (9 June 2016). https://doi.org/10.1117/1.JMM.15.2.024501
Published: 9 June 2016
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CITATIONS
Cited by 9 scholarly publications.
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KEYWORDS
Sensors

Photoresist materials

Thermoelectric materials

Bismuth

Metals

Microelectromechanical systems

Scanning electron microscopy

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