Presentation
11 November 2022 Feasibility study of alternative multilayer for EUV mask
Teiichiro Umezawa, Yohei Ikebe, Naoki Hayase, Takahiro Onoue
Author Affiliations +
Abstract
The mask 3D effect of the EUV mask is key to implementing a high NA scanner process. This is attributed not only to the absorber but also to the multilayer films. Mo/Si multilayers are widely used for EUV masks. However, it may not have sufficient properties in terms of mask 3D effect. We have developed an alternative multilayer toward application to the high NA system. There are various factors that mask blanks affect wafer productivity. In this report, we evaluated durability performances. These evaluation results on the alternative multilayer will be presented and the next action will be discussed for future production.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Teiichiro Umezawa, Yohei Ikebe, Naoki Hayase, and Takahiro Onoue "Feasibility study of alternative multilayer for EUV mask", Proc. SPIE PC12293, Photomask Technology 2022, PC122930E (11 November 2022); https://doi.org/10.1117/12.2644225
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KEYWORDS
Multilayers

Photomasks

Extreme ultraviolet

Extreme ultraviolet lithography

Reflectivity

Hydrogen

Laser scanners

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