Presentation
10 April 2024 EUV lithography reaches 5 nm half-pitch
Author Affiliations +
Abstract
Extreme ultraviolet (EUV) lithography takes the forefront as a key nanopatterning technique in the current mass production of CMOS chips. EUV interference lithography (EUV-IL) is pivotal for photoresist development and scientific projects involving nanopatterning. These systems typically employ two or more transmission diffraction gratings on thin silicon nitride membranes. Coherent EUV light diffracts through the gratings, creating an interference pattern in the photoresist. However, challenges as reduced diffraction efficiency and complex nanofabrication for sub-10 nm patterning hinder the pursuit of the ultimate resolution. To this end, we report the latest results of our mirror interference lithography (MIL) setup that uses reflected light to overcome transmission-grating challenges. Two mirrors with a central stop create an interference pattern with grazing angle dependent pitch. We achieved resolutions down to 5 nm HP at EUV wavelength, marking a new resolution record in nanolithography. This method is valuable for testing photoresists and pattern transfer techniques for high- and hyper-NA EUV lithography, or fabricating high-resolution nanostructures for scientific purposes.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Iason Giannopoulos, Iacopo Mochi, Michaela Vockenhuber, Yasin Ekinci, and Dimitrios Kazazis "EUV lithography reaches 5 nm half-pitch", Proc. SPIE PC12953, Optical and EUV Nanolithography XXXVII, PC129530P (10 April 2024); https://doi.org/10.1117/12.3010388
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KEYWORDS
Extreme ultraviolet

Extreme ultraviolet lithography

Diffraction

Diffraction gratings

Electron beam lithography

Mirrors

Lithography

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