OPC model building for EUV lithography

Benjamin C. P. Ho; Jonathan Doebler; Ardavan Niroomand

doi:10.1117/12.2531430

26 September 2019 OPC model building for EUV lithography

Benjamin C. P. Ho, Jonathan Doebler, Ardavan Niroomand

Proceedings Volume 11147, International Conference on Extreme Ultraviolet Lithography 2019; 1114714 (2019) https://doi.org/10.1117/12.2531430
Event: SPIE Photomask Technology + EUV Lithography, 2019, Monterey, California, United States

Abstract

After an initial introduction into logic fabrication, EUV lithography is finally moving into memory fabrication, and now memory companies must untangle the complex physics required to create an aerial image with this next generation technology. The optical proximity correction (OPC) model must understand and compensate for new EUV phenomena, such as non-telecentric illumination induced shadowing, across-slit variation, optical flare, and reticle black border effects. This paper compares the EUV OPC Modeling flow with the DUV modeling flow and discusses the new challenges EUV presents to OPC Model building for high-volume manufacturing.

Citation Download Citation

Benjamin C. P. Ho, Jonathan Doebler, and Ardavan Niroomand "OPC model building for EUV lithography", Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 1114714 (26 September 2019); https://doi.org/10.1117/12.2531430

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