EUV OPC modeling and correction requirements

Tamer H. Coskun; Tom Wallow; Gek Soon Chua; Keith Standiford; Craig Higgins; Yi Zou

doi:10.1117/12.2046341

18 March 2014 EUV OPC modeling and correction requirements

Tamer H. Coskun, Tom Wallow, Gek Soon Chua, Keith Standiford, Craig Higgins, Yi Zou

Proceedings Volume 9048, Extreme Ultraviolet (EUV) Lithography V; 90480W (2014) https://doi.org/10.1117/12.2046341
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

In this paper we discuss the EUV OPC modeling challenges and potential solutions, as well as OPC integration requirements to support the forthcoming application of EUV lithography. 10-nm-node OPC modeling is considered as an example. Wafer and mask process data were collected for calibration and verification patterns, to understand the mask making error/OPC model interactions. Several factors, including compact mask topography modeling impact, were analyzed by means of rigorous simulations and model fitting. This was performed on a large-scale data set, to ensure accurate characterization of the OPC modeling strategies, using a large number of patterns.

Citation Download Citation

Tamer H. Coskun, Tom Wallow, Gek Soon Chua, Keith Standiford, Craig Higgins, and Yi Zou "EUV OPC modeling and correction requirements", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90480W (18 March 2014); https://doi.org/10.1117/12.2046341

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KEYWORDS

Photomasks

3D modeling

Optical proximity correction

Data modeling

Extreme ultraviolet

Calibration

Semiconducting wafers

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