Removal behavior of Sn and Pb contaminants on EUV mask after EUV exposure

Dong-Hyeon Kwon; Hyun-Gyu Kang; Tae-Gon Kim; Jin-Ho Ahn; Sang-Sul Lee; Jin-Goo Park

doi:10.1117/12.2641800

1 December 2022 Removal behavior of Sn and Pb contaminants on EUV mask after EUV exposure

Dong-Hyeon Kwon, Hyun-Gyu Kang, Tae-Gon Kim, Jin-Ho Ahn, Sang-Sul Lee, Jin-Goo Park

Proceedings Volume 12293, Photomask Technology 2022; 122930B (2022) https://doi.org/10.1117/12.2641800
Event: SPIE Photomask Technology + EUV Lithography, 2022, Monterey, California, United States

Abstract

Tin (Sn) and Lead (Pb) particles released from the EUV scanner can contaminate the EUV mask causing serious yield and throughput problems. These contaminants can worsen during EUV exposure and become difficult to remove, leading to damaging the EUV mask in the process. To effectively remove contaminants without substrate damage, it is necessary to understand the removal behavior of the contaminants. In this study, the removal behavior of Sn and Pb particles was studied by simulating the EUV exposure heated by rapid thermal annealing. The removal forces between the thermally aged Sn and Pb particles and EUV substrate surfaces were quantitatively measured using atomic force microscopy (AFM). With the thermal aging time, the contact area of the deformed particle increases which requires a high removal force. After particle removal, the footprint of the contaminants was investigated to understand the surface quality of where the particles sat under the various exposure conditions. This study helps to better understand the adhesion mechanism and removal behavior of thermally deformed Sn and Pb particles on different EUV substrates.

Citation Download Citation

Dong-Hyeon Kwon, Hyun-Gyu Kang, Tae-Gon Kim, Jin-Ho Ahn, Sang-Sul Lee, and Jin-Goo Park "Removal behavior of Sn and Pb contaminants on EUV mask after EUV exposure", Proc. SPIE 12293, Photomask Technology 2022, 122930B (1 December 2022); https://doi.org/10.1117/12.2641800

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