Paper
1 August 1991 Accurate method for neutron fluence control used in improving neutron-transmutation-doped silicon for detectors
Eugenia T. Halmagean, Doina N. Lazarovici, Marian N. Udrea-Spinea
Author Affiliations +
Abstract
Neutron transmutation doping (NTD) of silicon (Si) in nuclear reactors is known as a successful way of obtaining high-quality material for power devices. Using NTD of Si in order to obtain high-quality material for detectors requires an accurate neutron fluence control. The paper presents results obtained in this field using silicon slices as neutron calibration material. Irradiation was done in a vertical channel of the VVR-S nuclear reactor in Bucharest, Romania. Final resistivity of slices used for calibration was between 20 and 50 ohm X cm. Special attention was paid to the accuracy of initial and final characterization of the slices concerning resistivity, lifetime, and defects, as well as to the neutron fluence calibration and control used during exposure. High-performance detectors were obtained using this material.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eugenia T. Halmagean, Doina N. Lazarovici, and Marian N. Udrea-Spinea "Accurate method for neutron fluence control used in improving neutron-transmutation-doped silicon for detectors", Proc. SPIE 1484, Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches, (1 August 1991); https://doi.org/10.1117/12.46512
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KEYWORDS
Silicon

Calibration

Infrared detectors

Sensors

Infrared radiation

Boron

Infrared sensors

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