Long-wavelength infrared doping-spike PtSi detector

True Lon Lin; Jin Suk Park; Sarath D. Gunapala; Eric W. Jones; Hector M. Del Castillo

doi:10.1117/12.160558

1 November 1993 Long-wavelength infrared doping-spike PtSi detector

True Lon Lin, Jin Suk Park, Sarath D. Gunapala, Eric W. Jones, Hector M. Del Castillo

Proceedings Volume 2020, Infrared Technology XIX; (1993) https://doi.org/10.1117/12.160558
Event: SPIE's 1993 International Symposium on Optics, Imaging, and Instrumentation, 1993, San Diego, CA, United States

Abstract

By incorporating a 1-nm-thick p⁺ doping spike at the PtSi/Si interface, we have successfully demonstrated extended cutoff wavelengths of PtSi Schottky infrared detectors in the long wavelength infrared (LWIR) regime for the first time. The extended cutoff wavelengths resulted from the combined effects of an increased electric field near the silicide/Si interface due to the p⁺ doping spike and the Schottky image force. The p⁺ doping spikes were grown by molecular beam epitaxy at 450 degree(s)C using elemental boron as the dopant source, with doping concentrations ranging from 5 X 10¹⁹ to 2 X 10²⁰ cm^-3. Transmission electron microscopy indicated good crystalline quality of the doping spikes. The cutoff wavelengths were shown to increase with increasing doping concentrations of the p⁺ spikes. Thermionic emission dark current characteristics were observed and photoresponse in the LWIR regime was demonstrated.

Citation Download Citation

True Lon Lin, Jin Suk Park, Sarath D. Gunapala, Eric W. Jones, and Hector M. Del Castillo "Long-wavelength infrared doping-spike PtSi detector", Proc. SPIE 2020, Infrared Technology XIX, (1 November 1993); https://doi.org/10.1117/12.160558

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