Substrate effect in chemically amplified resist

Shigeyasu Mori; Takeo Watanabe; Kouichirou Adachi; Takashi Fukushima; Keichiro Uda; Yuichi Sato

doi:10.1117/12.241812

14 June 1996 Substrate effect in chemically amplified resist

Shigeyasu Mori, Takeo Watanabe, Kouichirou Adachi, Takashi Fukushima, Keichiro Uda, Yuichi Sato

Proceedings Volume 2724, Advances in Resist Technology and Processing XIII; (1996) https://doi.org/10.1117/12.241812
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

SiN substrate effect in chemically amplified (CA) resist has been investigated by surface analysis and evaluating the pattern profile of CA negative tone resist. Fine profile can be replicated on SiN substrate treated with oxygen plasma optimized condition. Undercut profile can be affected by adsorbed materials on SiN substrate from thermal desorption spectroscopy (TDS) analysis results. From the results of electron spectroscopy for chemical analysis (ESCA), it is found that Si-N bonding is replaced to Si-O bonding while SiN substrate is treated with oxygen plasma. Relations between footing length and oxygen plasma treatment condition suggest that undercut profile due to the concentration of nitrogen on the surface of SiN substrate. At the interface between the SiN substrate and the CA resist, the SiN substrate works as base existing water, and quenches photo-generated-acids. The mechanism of substrate effect of SiN is clarified. Reducing the SiN-substrate effect by treating the surface with oxygen plasma, fine resist pattern without undercut and footing is formed on SiN substrate.

Citation Download Citation

Shigeyasu Mori, Takeo Watanabe, Kouichirou Adachi, Takashi Fukushima, Keichiro Uda, and Yuichi Sato "Substrate effect in chemically amplified resist", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); https://doi.org/10.1117/12.241812

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