Paper
22 August 2001 Mechanism of deep-UV photoresist tail on inorganic antireflective layer film
Seung-Jae Lee, Su Geun Lee, Min Kim, Sun-Hoo Park, Jeong-Lim Nam, Sang-In Lee
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Abstract
As the minimum feature size decreases down to 0.20micrometers , a minute pattern deformation can result in serious critical dimension variation. To minimize the critical dimension variation, the interaction of the positive-tone chemical amplification resist with SiOxNy type inorganic anti-reflective layer is investigated. The surface characterization of inorganic anti-reflective layer reveals that Si-NHx(x=0,1,2) and Si-N=O groups are attributed to the cause of the DUV PR footing. Based on the analyses, the technique to reduce the pattern deformation of the chemical amplification resist on inorganic anti-reflective layer is suggested.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seung-Jae Lee, Su Geun Lee, Min Kim, Sun-Hoo Park, Jeong-Lim Nam, and Sang-In Lee "Mechanism of deep-UV photoresist tail on inorganic antireflective layer film", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); https://doi.org/10.1117/12.436756
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Cited by 1 scholarly publication.
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KEYWORDS
NOx

Plasma treatment

Plasma

Oxygen

Deep ultraviolet

Nitrogen

Silicon

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