Electroless Cu and barrier layers for subhalf-micron multilevel interconnects

Sergey D. Lopatin; Yosef Y. Shacham-Diamand; Valery M. Dubin; P. K. Vasudev

doi:10.1117/12.284661

5 September 1997 Electroless Cu and barrier layers for subhalf-micron multilevel interconnects

Sergey D. Lopatin, Yosef Y. Shacham-Diamand, Valery M. Dubin, P. K. Vasudev

Proceedings Volume 3214, Multilevel Interconnect Technology; (1997) https://doi.org/10.1117/12.284661
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

Characteristics of electroless Cu, Co and Ni alloys for a multilevel metallization as well as for local interconnects and silicide formations for sub-0.5 micrometers ULSIs are presented. An integration of the electroless Cu and CoWP multilayers in an ULSI damascene process for the quarter-micron Cu interconnects of aspect ratio 4:1 is discussed. The following techniques are involved in this process: conformal electroless deposition of CoWP barrier on the thin sputtered Co seed layer, electroless Cu deposition directly onto CoWP barrier to fill a deep trench or a via, removal of the excess barrier and Cu on the oxide by chemical mechanical polishing, Pd activation of the Cu surface and selective electroless CoWP deposition onto Pd- activated in-laid Cu lines to prevent Cu oxidation and corrosion. The study of the selective electroless NiP deposition on Si for silicide formations for sub-0.25micrometers ULSI technology is also presented.

Citation Download Citation

Sergey D. Lopatin, Yosef Y. Shacham-Diamand, Valery M. Dubin, and P. K. Vasudev "Electroless Cu and barrier layers for subhalf-micron multilevel interconnects", Proc. SPIE 3214, Multilevel Interconnect Technology, (5 September 1997); https://doi.org/10.1117/12.284661

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