Monitoring process-induced oxide breakdown and its correlation to interface traps

Artur P. Balasinski; R. Hodges; J. Walters; Charles R. Spinner III

doi:10.1117/12.284673

2 September 1997 Monitoring process-induced oxide breakdown and its correlation to interface traps

Artur P. Balasinski, R. Hodges, J. Walters, Charles R. Spinner III

Proceedings Volume 3215, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing; (1997) https://doi.org/10.1117/12.284673
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

In-line testing methods of thin gate oxide integrity are compared based on oxide breakdown characteristics. The results were obtained on test structures with plasma induced oxide degradation due to the different plasma based deposition and etch processes used in the five metal CMOS fabrication. Voltage ramp technique has been identified as the most sensitive and universal technique to investigate breakdown characteristics. In order to find out about the possible correlation between the degradation of oxide bulk and the Si/SiO₂ interface, trap density in MOSFETs was also monitored using transconductance and charge pumping measurements. It was found that while interface degradation was indeed more severe in the structures showing lower breakdown voltages, no quantitative relationship with breakdown voltage could be established. Process-induced defect distribution across the wafers will also be discussed.

Citation Download Citation

Artur P. Balasinski, R. Hodges, J. Walters, and Charles R. Spinner III "Monitoring process-induced oxide breakdown and its correlation to interface traps", Proc. SPIE 3215, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing, (2 September 1997); https://doi.org/10.1117/12.284673

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