Study of interface state trap density on characteristics of MOS-HEMT

Ming-Chun Tseng; Ming-Hsien Hung; Dong-Sing Wuu; Ray-Hua Horng

doi:10.1117/12.2076678

13 March 2015 Study of interface state trap density on characteristics of MOS-HEMT

Ming-Chun Tseng, Ming-Hsien Hung, Dong-Sing Wuu, Ray-Hua Horng

Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 93630M (2015) https://doi.org/10.1117/12.2076678
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

In this study, the effects of chemical treatment on the properties of MOS capacitors and metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) were studied. The structure consist of Al₂O₃/u-GaN/AlN buffer/ Si substrate and Al₂O₃ (10 nm)/u-AlGaN (25 nm)/u-GaN (2μm)/AlN buffer/Si substrate for MOS capacitor and MOS-HEMT device, respectively. There are four chemical treatment recipes, which consist of organic solvents, oxygen plasma, BCl₃ plasma, dilute acidic solvent, hydrofluoric acid and RCA-like clean process to remove the metal ions, organic contamination and native oxide. Four different chemical treatment recipes treated the surface of u-GaN before Al₂O₃ was grown on the treated surface to reduce the interface state trap densities (D_it). The Dit value was calculated from measurement of C-V curve with 1M Hz frequency. The formation of interface state trap of u-GaN surface is modified by different chemical solution of varied chemical treatment recipe, which further influence the breakdown voltage (V_bk), on-resistance (R_on), threshold voltage (V_th) and drain current (I_d) of MOS-HEMT. The V_th of MOS-HEMT with organic solvents clean treatment is -11.00V. The MOS-HEMT after BCl₃ plasma and organic solvents clean treatment shows the lowest V_th of -9.55V. The electronic characteristics of MOS HEMT device with four different chemical treatment recipes were investigated in this article.

Citation Download Citation

Ming-Chun Tseng, Ming-Hsien Hung, Dong-Sing Wuu, and Ray-Hua Horng "Study of interface state trap density on characteristics of MOS-HEMT", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93630M (13 March 2015); https://doi.org/10.1117/12.2076678

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available