Rigorous simulation of exposure over nonplanar wafers

Andreas Erdmann; Christian K. Kalus; Thomas Schmoeller; Yewgenija Klyonova; Takashi Sato; Ayako Endo; Tsuyoshi Shibata; Yuuji Kobayashi

doi:10.1117/12.485390

26 June 2003 Rigorous simulation of exposure over nonplanar wafers

Andreas Erdmann, Christian K. Kalus, Thomas Schmoeller, Yewgenija Klyonova, Takashi Sato, Ayako Endo, Tsuyoshi Shibata, Yuuji Kobayashi

Author Affiliations +

Proceedings Volume 5040, Optical Microlithography XVI; (2003) https://doi.org/10.1117/12.485390
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

Standard simulations of optical projection systems for lithography with scalar or vector methods of Fourier optics make the assumption that the wafer stack consists of homogeneous layers. We introduce a general scheme for the rigorous electromagnetic field (EMF) simulation of lithographic exposures over non-planar wafers. Rigorous EMF simulations are performed with the finite-difference time-domain (FDTD) method. The described method is used to simulate several typical scenarios for lithographic exposures over non-planar wafers. This includes the exposure of resist lines over a poly-Si line on the wafer with orthogonal orientation, the simulation of “classical” notch problems, and the simulation of lithographic exposures over wafers with defects.

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Andreas Erdmann, Christian K. Kalus, Thomas Schmoeller, Yewgenija Klyonova, Takashi Sato, Ayako Endo, Tsuyoshi Shibata, and Yuuji Kobayashi "Rigorous simulation of exposure over nonplanar wafers", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485390

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