Paper
18 November 2003 Compact electron-based EUV source
Andre Egbert, Boris Tkachenko, Andreas Ostendorf, Stefan Becker, Boris N. Chichkov
Author Affiliations +
Proceedings Volume 5063, Fourth International Symposium on Laser Precision Microfabrication; (2003) https://doi.org/10.1117/12.540546
Event: Fourth International Symposium on Laser Precision Microfabrication, 2003, Munich, Germany
Abstract
A compact extreme ultraviolet (EUV) source for metrology is developed. This source is based on an extension of conventional x-ray tube technology into the EUV spectral range. As in an ordinary x-ray tube, electrons are generated by a filament, accelerated in a high-voltage electric field toward an anode, and focused onto a solid target. In this "EUV tube" silicon targets are used to generate radiation at 13.5 nm. Absolute conversion efficiencies from electrons into EUV photons are measured. Illustrations of spectral and spatial properties are given and investigations of the long-term stability of the EUV emission are performed. Possibilities for a power scaling into the milliwatt range are discussed.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andre Egbert, Boris Tkachenko, Andreas Ostendorf, Stefan Becker, and Boris N. Chichkov "Compact electron-based EUV source", Proc. SPIE 5063, Fourth International Symposium on Laser Precision Microfabrication, (18 November 2003); https://doi.org/10.1117/12.540546
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KEYWORDS
Extreme ultraviolet

Silicon

Electrons

Solids

Metrology

X-rays

Beryllium

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