Water-developable resists based on glyceryl methacrylate for 193-nm lithography

Jin-Baek Kim; Ji-Hyun Jang; Jae-Hak Choi; Kwan-Ku Lee; Jong-Sung Ko

doi:10.1117/12.534533

14 May 2004 Water-developable resists based on glyceryl methacrylate for 193-nm lithography

Jin-Baek Kim, Ji-Hyun Jang, Jae-Hak Choi, Kwan-Ku Lee, Jong-Sung Ko

Proceedings Volume 5376, Advances in Resist Technology and Processing XXI; (2004) https://doi.org/10.1117/12.534533
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

Novel water-developable negative resists were designed to induce both cross-linking and polarity change upon exposure and bake. The matrix polymers were synthesized by copolymerization of glyceryl methacrylate and methacrolein. The acid-catalyzed acetalization of the polymer induced cross-linking, polarity change, and increase in dry-etch resistance. The resist formulated with this polymer and cast in a water-ethanol mixture, showed 0.7 μm line and space patterns using a mercury-xenone lamp in a contact printing mode and pure water as a developer.

Citation Download Citation

Jin-Baek Kim, Ji-Hyun Jang, Jae-Hak Choi, Kwan-Ku Lee, and Jong-Sung Ko "Water-developable resists based on glyceryl methacrylate for 193-nm lithography", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.534533

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