Simulation analysis of printability of scratch and bump defects in EUV lithography

Minoru Sugawara; Iwao Nishiyama

doi:10.1117/12.657640

23 March 2006 Simulation analysis of printability of scratch and bump defects in EUV lithography

Minoru Sugawara, Iwao Nishiyama

Proceedings Volume 6151, Emerging Lithographic Technologies X; 61510W (2006) https://doi.org/10.1117/12.657640
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

This study investigated what impact smoothing and non-smoothing deposition have on printability on a wafer for scratch and bump defects. For bump defects, smoothing deposition does not widen a defect and provides a comparatively large allowable size. In contrast, for scratch defects it widens a defect from the bottom to the top of the multilayer when mass is conserved in every monolayer. The expansion of a scratch defect markedly degrades the quality of a printed image on a wafer. For scratch defects, a detailed evaluation of the light intensity distributions on both the mask and wafer surfaces, and the diffracted-light distribution, was carried out to investigate how smoothing deposition degrades image quality. It was concluded that, for scratch defects, the energy loss at the pupil degrades the image quality on a wafer, since weak diffraction peaks produced by the defect spread through all diffraction orders. Besides the allowable size of bump, scratch, and pit defects was determined using the criterion of a maximum CD variation of 10%.

Citation Download Citation

Minoru Sugawara and Iwao Nishiyama "Simulation analysis of printability of scratch and bump defects in EUV lithography", Proc. SPIE 6151, Emerging Lithographic Technologies X, 61510W (23 March 2006); https://doi.org/10.1117/12.657640

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