Diblock copolymer directed self-assembly for CMOS device fabrication

Li-Wen Chang; H.-S. Philip Wong

doi:10.1117/12.661028

14 March 2006 Diblock copolymer directed self-assembly for CMOS device fabrication

Li-Wen Chang, H.-S. Philip Wong

Proceedings Volume 6156, Design and Process Integration for Microelectronic Manufacturing IV; 615611 (2006) https://doi.org/10.1117/12.661028
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

We present our recent work on using diblock copolymer directed self-assembly for the fabrication of silicon MOSFETs. Instead of using self-assembly to assemble the entire device, we plan to utilize self-assembly to perform one critical step of the complex MOSFET process flow in the beginning. Initial results of using PS-b-PMMA to define pores with hexagonal array having diameter of 20 nm for contact hole patterning will be described. Potential integration issues for making MOSFETs will also be addressed.

Citation Download Citation

Li-Wen Chang and H.-S. Philip Wong "Diblock copolymer directed self-assembly for CMOS device fabrication", Proc. SPIE 6156, Design and Process Integration for Microelectronic Manufacturing IV, 615611 (14 March 2006); https://doi.org/10.1117/12.661028

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